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FDC5661N-F085
+Lista de MateriaisMOSFET N-CH 60V 4.3A SUPERSOT6
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Fabricanteonsemi
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Peça do Fabricante #FDC5661N-F085
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Pacote TSOT-23-6
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Em Estoque6189
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q101, PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 4.3A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 47mOhm @ 4.3A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 19 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 763 pF @ 25 V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SuperSOT™-6 |
Visão Geral
Description
The FDC5661N-F085 is a dual N-channel MOSFET designed for use in various electronic applications such as power management, load switching, and DC-DC conversion. This component is known for its compact packaging, which is ideal for space-constrained applications, typically found in automotive, consumer electronics, and industrial sectors.
Key features of the FDC5661N-F085 include its low on-resistance, which ensures efficient current flow with minimal power loss, leading to improved system efficiency. It also supports a wide range of voltages and currents, making it versatile for different applications. The device's fast switching capabilities enhance performance in high-frequency applications, contributing to reduced power consumption and heat generation.
The FDC5661N-F085's robust design supports high reliability and durability, even in harsh operating environments. It typically comes in a surface-mount package, which simplifies installation and integration into printed circuit boards (PCBs). Overall, this MOSFET is valued for its efficiency, compactness, and reliability, making it suitable for modern electronic applications.
Key features of the FDC5661N-F085 include its low on-resistance, which ensures efficient current flow with minimal power loss, leading to improved system efficiency. It also supports a wide range of voltages and currents, making it versatile for different applications. The device's fast switching capabilities enhance performance in high-frequency applications, contributing to reduced power consumption and heat generation.
The FDC5661N-F085's robust design supports high reliability and durability, even in harsh operating environments. It typically comes in a surface-mount package, which simplifies installation and integration into printed circuit boards (PCBs). Overall, this MOSFET is valued for its efficiency, compactness, and reliability, making it suitable for modern electronic applications.
Equivalent
The FDC5661N-F085 is a dual N-channel MOSFET commonly used for load switching applications. Equivalent products can include similar dual N-channel MOSFETs with comparable voltage, current ratings, and packaging. Possible equivalents are:
1. DMN6066SSS by Diodes Incorporated
2. BSS83PH6327XTSA1 by Infineon Technologies
3. SiA437DJ by Vishay Siliconix
Always verify the specifications and compatibility for your specific application requirements.
1. DMN6066SSS by Diodes Incorporated
2. BSS83PH6327XTSA1 by Infineon Technologies
3. SiA437DJ by Vishay Siliconix
Always verify the specifications and compatibility for your specific application requirements.
Features
The FDC5661N-F085 is a dual N-channel MOSFET designed for efficient power management applications. Key features include:
1. Low On-Resistance: It offers a low R_DS(on), which reduces conduction losses, improving efficiency in power delivery.
2. Compact Package: The MOSFET is housed in an industry-standard 2x2 mm TSSOP-8 package, facilitating space-saving designs.
3. High-Speed Switching: It supports fast switching speeds, which is advantageous for high-frequency applications.
4. Thermal Performance: The device is designed to handle improved thermal conditions, ensuring reliable operation under varying thermal loads.
5. Automotive Qualification: It is AEC-Q101 qualified, making it suitable for automotive applications.
6. Wide Range of Applications: Ideal for use in DC-DC converters, power management in portable devices, and load switch applications.
These features make the FDC5661N-F085 a versatile component for designs requiring efficient power management and high reliability.
1. Low On-Resistance: It offers a low R_DS(on), which reduces conduction losses, improving efficiency in power delivery.
2. Compact Package: The MOSFET is housed in an industry-standard 2x2 mm TSSOP-8 package, facilitating space-saving designs.
3. High-Speed Switching: It supports fast switching speeds, which is advantageous for high-frequency applications.
4. Thermal Performance: The device is designed to handle improved thermal conditions, ensuring reliable operation under varying thermal loads.
5. Automotive Qualification: It is AEC-Q101 qualified, making it suitable for automotive applications.
6. Wide Range of Applications: Ideal for use in DC-DC converters, power management in portable devices, and load switch applications.
These features make the FDC5661N-F085 a versatile component for designs requiring efficient power management and high reliability.
Pinout
The FDC5661N-F085 is a dual N-channel MOSFET. It is typically housed in a standard package such as the SuperSOT-6 or similar, which usually has 6 pins. The function of this component is to act as a switch or amplifier in electronic circuits. Each MOSFET within the package has three main terminals: the gate (G), drain (D), and source (S). In a dual MOSFET configuration, you would have:
- Pin 1: Gate of MOSFET 1
- Pin 2: Source of MOSFET 1
- Pin 3: Drain of MOSFET 1
- Pin 4: Drain of MOSFET 2
- Pin 5: Source of MOSFET 2
- Pin 6: Gate of MOSFET 2
These pins enable the MOSFETs to be used in circuits for switching and amplifying electronic signals. The exact configuration and usage depend on the specific circuit design requirements.
- Pin 1: Gate of MOSFET 1
- Pin 2: Source of MOSFET 1
- Pin 3: Drain of MOSFET 1
- Pin 4: Drain of MOSFET 2
- Pin 5: Source of MOSFET 2
- Pin 6: Gate of MOSFET 2
These pins enable the MOSFETs to be used in circuits for switching and amplifying electronic signals. The exact configuration and usage depend on the specific circuit design requirements.
Manufacturer
The FDC5661N-F085 is a product manufactured by ON Semiconductor. ON Semiconductor is a leading global supplier of semiconductor-based solutions, known for its high-performance, energy-efficient, silicon-based products. The company provides a comprehensive portfolio of power and signal management, logic, discrete, and custom devices for automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace, and power applications. It focuses on enabling energy-efficient electronics innovation, supporting sustainable global technology advancements.
Application
The FDC5661N-F085 is a dual N-channel MOSFET known for its compact design and efficiency. Its primary application areas include power management systems, where it is used for switching and amplification. It is commonly found in DC-DC conversion circuits, battery protection circuits, load switching, and power management in portable devices. Its small form factor and low on-resistance make it suitable for use in space-constrained applications, such as smartphones, tablets, and other consumer electronics. Additionally, the FDC5661N-F085 is used in automotive applications, providing reliable performance under diverse thermal conditions.
Package
The FDC5661N-F085 is a dual N-channel MOSFET, typically packaged in an 8-pin MicroFET package. This package is designed to be compact, suitable for space-constrained applications, offering efficient thermal performance and reliable electrical connections.
