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IXTA08N100D2
+Lista de MateriaisMOSFET N-CH 1000V 800MA TO263
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FabricanteIXYS
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Peça do Fabricante #IXTA08N100D2
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Pacote TO-263AA
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Em Estoque4492
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Especificações
| Atributo | Valor |
| Package / Case | Tube |
| Series | Depletion |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain(Id) @ 25°C | 800mA (Tc) |
| Rds On(Max) @ Id Vgs | 21Ohm @ 400mA, 0V |
| Gate Charge(Qg)(Max) @ Vgs | 14.6 nC @ 5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 325 pF @ 25 V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 60W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263AA |
Visão Geral
Description
The IXTA08N100D2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by IXYS Corporation. It is designed for use in high-efficiency power switching applications. This N-channel MOSFET is known for its high voltage capacity, with a maximum drain-source voltage (V_DS) of 1000V, making it suitable for high-voltage circuits. The device also features a continuous drain current (I_D) of 8A, allowing it to handle moderate power loads effectively.
Its low on-resistance (R_DS(on)) ensures minimal power loss during operation, which enhances overall efficiency. The IXTA08N100D2 is typically used in applications such as power supplies, motor drives, and other industrial electronics where high voltage and efficiency are critical. Additionally, it is designed to offer robust performance in demanding environments.
Key features of the IXTA08N100D2 include fast switching speed, thermal stability, and rugged construction, which collectively contribute to its reliability in various applications. This MOSFET is encapsulated in a TO-220 package, providing ease of mounting and thermal management.
Its low on-resistance (R_DS(on)) ensures minimal power loss during operation, which enhances overall efficiency. The IXTA08N100D2 is typically used in applications such as power supplies, motor drives, and other industrial electronics where high voltage and efficiency are critical. Additionally, it is designed to offer robust performance in demanding environments.
Key features of the IXTA08N100D2 include fast switching speed, thermal stability, and rugged construction, which collectively contribute to its reliability in various applications. This MOSFET is encapsulated in a TO-220 package, providing ease of mounting and thermal management.
Equivalent
The IXTA08N100D2 is a N-channel MOSFET known for its high voltage and current handling capabilities. Equivalent products from other manufacturers may include:
1. STMicroelectronics STW12NM120
2. Infineon Technologies IPP60R190P6
3. Vishay Siliconix SiHP33N60E
4. ON Semiconductor NTP35N25G
These alternatives should be evaluated for compatibility based on specific electrical and thermal requirements in your application.
1. STMicroelectronics STW12NM120
2. Infineon Technologies IPP60R190P6
3. Vishay Siliconix SiHP33N60E
4. ON Semiconductor NTP35N25G
These alternatives should be evaluated for compatibility based on specific electrical and thermal requirements in your application.
Features
The IXTA08N100D2 is a power MOSFET designed for high-efficiency and high-speed switching applications. Key features include:
1. N-Channel MOSFET: This device is an N-channel MOSFET, which is generally used for switching and amplifying electronic signals in the enhancement mode.
2. Voltage and Current Ratings: It has a high voltage rating of up to 100V, making it suitable for medium to high power applications. The specific current handling capability will depend on the exact configuration and usage conditions.
3. Low On-Resistance: The MOSFET is designed to have a low on-resistance, which reduces power losses and increases efficiency when the device is in the 'on' state.
4. High-Speed Switching: It supports fast switching speeds, which is crucial for applications requiring rapid changes in states, such as power supply circuits.
5. Thermal Performance: The device typically comes with good thermal performance, allowing it to handle higher power levels without overheating.
6. Package Type: It is generally available in a TO-220 package, which is common for power devices, providing efficient thermal dissipation.
These features make it suitable for applications like power management, motor drivers, and DC-DC converters.
1. N-Channel MOSFET: This device is an N-channel MOSFET, which is generally used for switching and amplifying electronic signals in the enhancement mode.
2. Voltage and Current Ratings: It has a high voltage rating of up to 100V, making it suitable for medium to high power applications. The specific current handling capability will depend on the exact configuration and usage conditions.
3. Low On-Resistance: The MOSFET is designed to have a low on-resistance, which reduces power losses and increases efficiency when the device is in the 'on' state.
4. High-Speed Switching: It supports fast switching speeds, which is crucial for applications requiring rapid changes in states, such as power supply circuits.
5. Thermal Performance: The device typically comes with good thermal performance, allowing it to handle higher power levels without overheating.
6. Package Type: It is generally available in a TO-220 package, which is common for power devices, providing efficient thermal dissipation.
These features make it suitable for applications like power management, motor drivers, and DC-DC converters.
Pinout
The IXTA08N100D2 is a power MOSFET from IXYS, designed for high-power applications. It is housed in a TO-220 package. The device typically has three pins:
1. Gate (G): This pin is used to control the MOSFET's conduction by applying voltage. A positive voltage at the gate relative to the source will cause the MOSFET to conduct between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows when the MOSFET is in the 'on' state. It is connected to the load in most applications.
3. Source (S): The source is the terminal connected to the ground or the negative side of the supply in a circuit. It is the reference point for the gate voltage.
The IXTA08N100D2 is typically used for switching applications in power supplies, motor controllers, and other high-voltage circuits, due to its high breakdown voltage and current capacity.
1. Gate (G): This pin is used to control the MOSFET's conduction by applying voltage. A positive voltage at the gate relative to the source will cause the MOSFET to conduct between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows when the MOSFET is in the 'on' state. It is connected to the load in most applications.
3. Source (S): The source is the terminal connected to the ground or the negative side of the supply in a circuit. It is the reference point for the gate voltage.
The IXTA08N100D2 is typically used for switching applications in power supplies, motor controllers, and other high-voltage circuits, due to its high breakdown voltage and current capacity.
Manufacturer
The IXTA08N100D2 is manufactured by IXYS Corporation. IXYS is a company that specializes in the development and production of power semiconductors and integrated circuits. The company is known for its focus on power management solutions and offers a wide range of products including MOSFETs, IGBTs, and thyristors, among other components. These products are primarily used in industrial, transportation, telecommunications, and consumer electronics applications. IXYS is part of Littelfuse, Inc., a company that acquired it in 2018, broadening its portfolio in the semiconductor and industrial electronics markets.
Application
The IXTA08N100D2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its high voltage and current handling capabilities. Key application areas include:
1. Switching Power Supplies: Used in power conversion circuits due to its efficiency.
2. Motor Control: Suitable for driving motors in industrial and consumer applications.
3. Lighting Systems: Utilized in LED drivers and other lighting controls.
4. Inverters and Converters: Applied in DC-AC and AC-DC conversion systems.
5. Renewable Energy Systems: Used in solar inverters and other renewable energy technologies.
6. Automotive Applications: Employed in various automotive electronics for power management.
Its high performance and reliability make it ideal for these demanding applications.
1. Switching Power Supplies: Used in power conversion circuits due to its efficiency.
2. Motor Control: Suitable for driving motors in industrial and consumer applications.
3. Lighting Systems: Utilized in LED drivers and other lighting controls.
4. Inverters and Converters: Applied in DC-AC and AC-DC conversion systems.
5. Renewable Energy Systems: Used in solar inverters and other renewable energy technologies.
6. Automotive Applications: Employed in various automotive electronics for power management.
Its high performance and reliability make it ideal for these demanding applications.
Package
The IXTA08N100D2 is a MOSFET transistor packaged in a TO-263 (D2PAK) surface-mount package. This package type is known for its capability to handle higher power and is designed for efficient thermal performance with a low-profile design suitable for various electronic applications.
