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IXTY1R6N100D2
+Lista de MateriaisMOSFET N-CH 1000V 1.6A TO252
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FabricanteIXYS
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Peça do Fabricante #IXTY1R6N100D2
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Pacote TO-252-3
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Em Estoque4430
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Especificações
| Atributo | Valor |
| Package / Case | Tube |
| Series | Depletion |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain(Id) @ 25°C | 1.6A (Tc) |
| Rds On(Max) @ Id Vgs | 10Ohm @ 800mA, 0V |
| Gate Charge(Qg)(Max) @ Vgs | 27 nC @ 5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 645 pF @ 25 V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 100W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
Visão Geral
Description
Equivalent
Features
1. Voltage Rating: It has a drain-source voltage (V_ds) rating of 100V.
2. Current Rating: The continuous drain current (I_d) is typically rated at 1.6A.
3. R_DS(on): It features a low on-resistance, optimizing performance and efficiency.
4. Technology: Utilizes Infineon’s OptiMOS technology, which is designed for reduced conduction losses and improved switching performance.
5. Package: The device is typically available in a TO-220 package, which is commonly used for power transistors.
6. Applications: Suitable for use in various applications, including DC-DC converters, power management, and motor control.
7. Temperature Range: The component is designed to operate efficiently over a wide temperature range.
8. Efficiency: Engineered for high efficiency in switching applications, contributing to energy savings and reduced heat generation.
These features make the IXTY1R6N100D2 suitable for high-efficiency power conversion and switching applications.
Pinout
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage here allows current to flow between the drain and source.
2. Drain (D) - The drain is where the current flows out of the transistor when it is in the "on" state.
3. Source (S) - This is the pin where current enters the transistor.
The device is designed for high voltage and high current applications. It is often used in power management applications, switching power supplies, and motor drives. Its features typically include low on-resistance and fast switching speeds, making it suitable for efficient power control. Always refer to the manufacturer's datasheet for detailed specifications and pin configuration.