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MMBFJ175LT1G
+Lista de MateriaisJFET P-CH 30V 0.225W SOT23-3
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Fabricanteonsemi
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Peça do Fabricante #MMBFJ175LT1G
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Pacote SOT-23-3
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Em Estoque2714
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Voltage - Breakdown(V(BR)GSS) | 30 V |
| Current - Drain(Idss) @ Vds(Vgs=0) | 7 mA @ 15 V |
| Voltage - Cutoff(VG Soff) @ Id | 3 V @ 10 nA |
| Input Capacitance(Ciss)(Max) @ Vds | 11pF @ 10V (VGS) |
| Rds On | 125 Ohms |
| Power - Max | 225 mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
The MMBFJ175LT1G is a discrete semiconductor component, specifically a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is designed for use in various electronic circuits where efficient switching and amplification are required. Key features of the MMBFJ175LT1G include its low on-resistance, fast switching speed, and high reliability. This makes it suitable for applications such as power management, signal switching, and load switching in portable and battery-operated devices.
The device typically comes in a small SOT-23 package, which is advantageous for saving space on circuit boards, especially in compact electronic designs. Given its specifications, it is often utilized in consumer electronics, industrial controls, and other applications where space and efficient power handling are critical. The MMBFJ175LT1G is noted for its ability to handle moderate power levels, making it a versatile component for engineers and designers looking to optimize circuit performance while maintaining energy efficiency.
The device typically comes in a small SOT-23 package, which is advantageous for saving space on circuit boards, especially in compact electronic designs. Given its specifications, it is often utilized in consumer electronics, industrial controls, and other applications where space and efficient power handling are critical. The MMBFJ175LT1G is noted for its ability to handle moderate power levels, making it a versatile component for engineers and designers looking to optimize circuit performance while maintaining energy efficiency.
Equivalent
The MMBFJ175LT1G is a JFET (Junction Field-Effect Transistor). Equivalent products include:
1. J175 (generic)
2. 2N5457 (similar specs)
3. BF245 (different pinout)
4. PN4393 (alternative)
5. NTE457 (NTE Electronics equivalent)
Ensure compatibility by verifying specific parameters such as pinch-off voltage, drain current, and package type before substituting.
1. J175 (generic)
2. 2N5457 (similar specs)
3. BF245 (different pinout)
4. PN4393 (alternative)
5. NTE457 (NTE Electronics equivalent)
Ensure compatibility by verifying specific parameters such as pinch-off voltage, drain current, and package type before substituting.
Features
The MMBFJ175LT1G is a P-channel JFET (Junction Field-Effect Transistor) commonly used in analogue switching and amplification applications. Key features include:
1. Package Type: Available in a compact SOT-23 package, making it suitable for space-constrained designs.
2. P-Channel: This device is a P-channel JFET, which means it controls current between the source and drain terminals under the influence of a negative gate-source voltage.
3. Low Noise: It offers low noise operation, which is beneficial in audio and RF applications where signal integrity is crucial.
4. High Input Impedance: JFETs inherently have high input impedance, reducing the load on preceding circuit stages.
5. Low On-State Resistance: Allows efficient switching with minimal power loss.
6. Voltage Rating: Typically operates with a drain-source voltage up to -25V, suitable for various low-voltage applications.
7. RoHS Compliant: It is lead-free and complies with Restriction of Hazardous Substances (RoHS) directives, suitable for environmentally-conscious manufacturing processes.
These features make the MMBFJ175LT1G a versatile choice for designers needing reliable performance in low-power switching and amplification tasks.
1. Package Type: Available in a compact SOT-23 package, making it suitable for space-constrained designs.
2. P-Channel: This device is a P-channel JFET, which means it controls current between the source and drain terminals under the influence of a negative gate-source voltage.
3. Low Noise: It offers low noise operation, which is beneficial in audio and RF applications where signal integrity is crucial.
4. High Input Impedance: JFETs inherently have high input impedance, reducing the load on preceding circuit stages.
5. Low On-State Resistance: Allows efficient switching with minimal power loss.
6. Voltage Rating: Typically operates with a drain-source voltage up to -25V, suitable for various low-voltage applications.
7. RoHS Compliant: It is lead-free and complies with Restriction of Hazardous Substances (RoHS) directives, suitable for environmentally-conscious manufacturing processes.
These features make the MMBFJ175LT1G a versatile choice for designers needing reliable performance in low-power switching and amplification tasks.
Pinout
The MMBFJ175LT1G is a P-channel JFET (Junction Field Effect Transistor) manufactured by ON Semiconductor. It typically comes in a SOT-23 package and has three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the conductivity between the source and drain. By applying a voltage to the gate, you can modulate the current flow through the device.
2. Source (S): This is the source of charge carriers. For a P-channel JFET, the source is where holes (positive charge carriers) enter the device.
3. Drain (D): This is where the charge carriers exit the device.
The MMBFJ175LT1G is used in various applications, including switching and amplifier circuits, due to its ability to handle low-level signals with low noise.
1. Gate (G): This pin is used to control the conductivity between the source and drain. By applying a voltage to the gate, you can modulate the current flow through the device.
2. Source (S): This is the source of charge carriers. For a P-channel JFET, the source is where holes (positive charge carriers) enter the device.
3. Drain (D): This is where the charge carriers exit the device.
The MMBFJ175LT1G is used in various applications, including switching and amplifier circuits, due to its ability to handle low-level signals with low noise.
Manufacturer
The MMBFJ175LT1G is manufactured by ON Semiconductor, now known as onsemi. Onsemi is a leading semiconductor supplier that designs and manufactures a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices. The company focuses on providing energy-efficient innovations to support automotive, industrial, cloud power, and IoT markets. Onsemi is recognized for its commitment to sustainability and the development of technologies that promote energy efficiency and reduced environmental impact.
Application
The MMBFJ175LT1G is a P-Channel JFET transistor commonly used in various applications. Its primary uses include signal amplification and switching in analog circuits. It is suitable for RF circuits, audio amplifiers, and general-purpose amplification tasks due to its low noise characteristics. Additionally, it is used in impedance buffering and voltage-controlled resistor applications. The transistor's compact size makes it ideal for portable and space-constrained devices. It is also used in sensor interfacing, especially where low-level signals need amplification without significant noise interference.
Package
The MMBFJ175LT1G is a P-channel JFET transistor packaged in a small-outline, surface-mount SOT-23 package.
