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NT5AD512M8E3-JRI
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FabricanteNanya Technology
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Peça do Fabricante #NT5AD512M8E3-JRI
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Especificações
| Atributo | Valor |
| EU Ro HS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8542.32.00.36 |
| Automotive | Unknown |
| PPAP | Unknown |
| Chip Density (bit) | 4G |
| Number of Bits / Word (bit) | 8 |
| Minimum Operating Supply Voltage (V) | 1.14 |
| Typical Operating Supply Voltage (V) | 1.2 |
| Maximum Operating Supply Voltage (V) | 1.26 |
| Operating Current (m A) | 206 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 95 |
| Mounting Type | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 7.5 |
| Package Length | 10.5 |
| PCB changed | 78 |
| Supplier Device Package | TFBGA |
| Pin Count | 78 |
| DRAM Type | DDR4 SDRAM |
| Organization | 512Mx8 |
| Number of Internal Banks | 4 |
| Number of Words per Bank | 128M |
| Data Bus Width (bit) | 8 |
| Maximum Clock Rate (M Hz) | 3200 |
| Maximum Access Time (ns) | 0.16 |
| Address Bus Width (bit) | 17 |
| Number of I / O Lines (bit) | 8 |
| Supplier Temperature Grade | Industrial |
Visão Geral
Description
The NT5AD512M8E3-JRI is a specific part number for a type of DRAM (Dynamic Random-Access Memory) module, typically used in computing devices to store data temporarily for quick access by the processor. This module is part of a memory product line from Nanya Technology, a company known for manufacturing semiconductor products, including DRAM and flash memory.
The part number indicates specific characteristics such as the memory type, capacity, and potentially the configuration of the memory module. The "512M" in the part number suggests that it has a capacity of 512 megabits. DRAM modules like the NT5AD512M8E3-JRI are essential for system performance as they allow for fast data retrieval and processing, which is crucial for running applications smoothly. These modules are typically used in computers, servers, and other electronics that require efficient and reliable memory solutions.
For further details on specifications such as speed, voltage, and compatibility, one would need to refer to the technical datasheet provided by the manufacturer.
The part number indicates specific characteristics such as the memory type, capacity, and potentially the configuration of the memory module. The "512M" in the part number suggests that it has a capacity of 512 megabits. DRAM modules like the NT5AD512M8E3-JRI are essential for system performance as they allow for fast data retrieval and processing, which is crucial for running applications smoothly. These modules are typically used in computers, servers, and other electronics that require efficient and reliable memory solutions.
For further details on specifications such as speed, voltage, and compatibility, one would need to refer to the technical datasheet provided by the manufacturer.
Equivalent
The NT5AD512M8E3-JRI is a DDR3L SDRAM chip. Equivalent products are those from other major DRAM manufacturers that share similar specifications such as capacity (512Mb), type (DDR3L), and speed (commonly 1600 Mbps). Some examples may include:
1. Samsung K4B4G1646D-BCK0
2. Hynix H5TQ4G63AFR-PBC
3. Micron MT41K512M8RH-125
Ensure compatibility by cross-referencing exact specifications and part numbers with manufacturers' datasheets.
1. Samsung K4B4G1646D-BCK0
2. Hynix H5TQ4G63AFR-PBC
3. Micron MT41K512M8RH-125
Ensure compatibility by cross-referencing exact specifications and part numbers with manufacturers' datasheets.
Pinout
The NT5AD512M8E3-JRI is a DDR3 SDRAM chip. It features a 78-ball FBGA (Fine Ball Grid Array) package. The chip is a 512Mb (megabit) DRAM, organized as 64M × 8 bits. This organization indicates that it has an 8-bit data bus width.
The primary functions of this DDR3 SDRAM chip include:
1. Data Storage: It stores data temporarily for quick access by the CPU or other processors.
2. High-Speed Data Transfer: Enables fast data transfer rates to and from the CPU, supporting efficient system performance.
3. Low Power Consumption: Designed to use less power compared to previous DRAM generations, beneficial for battery-powered devices.
4. Synchronous Operation: Operates in synchronization with the memory controller, allowing for precise timing in data access.
The NT5AD512M8E3-JRI is typically used in applications requiring high-speed and reliable memory, such as in computers and other electronic devices.
The primary functions of this DDR3 SDRAM chip include:
1. Data Storage: It stores data temporarily for quick access by the CPU or other processors.
2. High-Speed Data Transfer: Enables fast data transfer rates to and from the CPU, supporting efficient system performance.
3. Low Power Consumption: Designed to use less power compared to previous DRAM generations, beneficial for battery-powered devices.
4. Synchronous Operation: Operates in synchronization with the memory controller, allowing for precise timing in data access.
The NT5AD512M8E3-JRI is typically used in applications requiring high-speed and reliable memory, such as in computers and other electronic devices.
Manufacturer
The NT5AD512M8E3-JRI is manufactured by Nanya Technology Corporation. Nanya is a Taiwanese company that specializes in the development, manufacturing, and sales of dynamic random-access memory (DRAM) products. As one of the major DRAM manufacturers globally, Nanya focuses on producing memory solutions that are used in various applications, including computing, consumer electronics, industrial applications, and more. The company's operations cover a wide range of DRAM technologies, including DDR (Double Data Rate) and LPDDR (Low Power Double Data Rate), catering to both traditional and innovative technology sectors. Nanya Technology Corporation is recognized for its contributions to the semiconductor industry, providing essential components that power numerous electronic devices worldwide.
Application
The NT5AD512M8E3-JRI is a type of DDR3 DRAM memory chip. It is commonly used in applications that require efficient and high-speed data processing. Typical application areas include:
1. Computing Devices: Used in PCs, laptops, and servers for system memory.
2. Embedded Systems: Suitable for use in industrial automation, automotive electronics, and IoT devices.
3. Consumer Electronics: Found in gaming consoles, smart TVs, and set-top boxes.
4. Networking Equipment: Used in routers, switches, and other networking hardware.
5. Mobile Devices: Utilized in smartphones and tablets for memory management.
Its efficiency, reliability, and speed make it ideal for these high-performance applications.
1. Computing Devices: Used in PCs, laptops, and servers for system memory.
2. Embedded Systems: Suitable for use in industrial automation, automotive electronics, and IoT devices.
3. Consumer Electronics: Found in gaming consoles, smart TVs, and set-top boxes.
4. Networking Equipment: Used in routers, switches, and other networking hardware.
5. Mobile Devices: Utilized in smartphones and tablets for memory management.
Its efficiency, reliability, and speed make it ideal for these high-performance applications.
Package
The NT5AD512M8E3-JRI is a type of DRAM memory chip. The package type for this chip is generally a BGA (Ball Grid Array), which is a type of surface-mount packaging used for integrated circuits, offering high density and compact size.
