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NTA4001NT1G
+Lista de MateriaisMOSFET N-CH 20V 238MA SC75
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Fabricanteonsemi
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Peça do Fabricante #NTA4001NT1G
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Pacote SOT-523
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 238mA (Tj) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 3Ohm @ 10mA, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 100µA |
| Vgs(Max) | ±10V |
| Input Capacitance(Ciss)(Max) @ Vds | 20 pF @ 5 V |
| Power Dissipation (Max) | 300mW (Tj) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-75, SOT-416 |
Visão Geral
Description
If NTA4001NT1G pertains to a particular academic or professional program, the course could cover topics such as advanced technical applications, innovative technologies, or niche industry skills. The "4001" might suggest a senior or advanced level, and if it includes practical or hands-on components, it could involve case studies, real-world scenarios, or laboratory work.
For a detailed understanding, including the course's objectives, prerequisites, and specific content, referring to the syllabus or official program description from the offering institution or organization would be necessary. If this is a course you are considering, reviewing these materials can help ensure it aligns with your educational or professional goals.
Equivalent
1. BSS84 - by Infineon Technologies.
2. FDC5614P - by ON Semiconductor.
3. SI2301 - by Vishay.
4. 2N7002P - by NXP Semiconductors (for P-channel).
When choosing an equivalent, ensure that the voltage, current, and power specifications match your application requirements. Always consult datasheets for precise compatibility.
Features
1. Package Type: SOT-23, which is a small surface-mount package ideal for compact circuit designs.
2. Maximum Collector Current (Ic): Typically 500 mA, allowing it to handle moderate current levels.
3. Collector-Emitter Voltage (Vceo): 40V, providing a moderate voltage handling capability.
4. Gain (hFE): A DC current gain typically ranging from 100 to 300, making it suitable for amplification purposes.
5. Power Dissipation (Pd): Typically 225 mW, which dictates the amount of power it can handle without overheating.
6. Thermal Resistance: The low thermal resistance ensures efficient heat dissipation during operation.
7. Operating Temperature Range: Typically from -55°C to 150°C, allowing it to function in a wide range of environmental conditions.
These features make it a versatile choice for various electronic projects requiring reliable switching and amplification.
Pinout
1. Gate (G): This pin is used to turn the MOSFET on or off by applying the appropriate voltage.
2. Source (S): This is the source terminal where the current enters the MOSFET.
3. Drain (D): This is the drain terminal where the current exits the MOSFET.
The primary function of the NTA4001NT1G is to act as a switch or amplifier in electronic circuits. It is often used in applications requiring low on-resistance and fast switching capability, such as power management, DC-DC converters, and load switching.
Manufacturer
Application
1. Switching Applications: Used in circuits requiring switching of loads such as relays, LEDs, and other low-power devices.
2. Signal Amplification: Functions as a small-signal amplifier in audio and RF circuits.
3. Voltage Regulation: Provides regulation and control in power management circuits.
4. Consumer Electronics: Utilized in devices like smartphones, tablets, and other portable electronics for power management and signal processing.
5. Industrial Automation: Employed in controlling and interfacing for sensors and actuators.
These applications leverage the transistor's efficiency in low-power and small-signal scenarios.