SQD50P06-15L_GE3

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SQD50P06-15L_GE3

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MOSFET P-CH 60V 50A TO252

  • FabricanteVishay Siliconix

  • Peça do Fabricante #SQD50P06-15L_GE3

  • Em Estoque4213

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Especificações

Atributo Valor
Series TrenchFET®
Part Status Active
Base Product Number SQD50
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 15.5mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5910 pF @ 25 V
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Cut Tape (CT), Tape & Reel (TR)

Visão Geral

Description

The SQD50P06-15L_GE3 is a P-channel MOSFET from Vishay Siliconix, designed for power management applications. Key features include:
- Voltage Rating: -60V
- Current Rating: -50A (continuous)
- Low On-Resistance (RDS(on)): 15mΩ (max) at VGS = -10V
- Fast Switching: Optimized for efficiency in DC-DC converters, motor control, and load switching.
- Package: TO-252 (DPAK), suitable for surface-mount designs.
It is part of Vishay’s TrenchFET® Gen III series, offering low gate charge (Qg) and high power density, making it ideal for high-efficiency, compact designs. Common applications include battery protection, power supplies, and automotive systems.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the SQD50P06-15L_GE3 (P-channel MOSFET, 60V, 50A, TO-252) include:
- IRF4905 (P-channel, 55V, 74A, TO-220)
- FQP50P06 (P-channel, 60V, 50A, TO-220)
- STP55P06 (P-channel, 60V, 55A, TO-220)
- AOD4185 (P-channel, 60V, 50A, TO-252)
Check datasheets for exact compatibility in your circuit.

Features

The SQD50P06-15L_GE3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -60V (Drain-Source)
- Current Rating: -50A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 15mΩ (max) @ VGS = -10V
- Gate Threshold Voltage (VGS(th)): -2V to -4V
- Fast Switching Speed: Low gate charge (Qg) for efficient performance
- Package: TO-252 (DPAK), surface-mount design
- Applications: Power management, DC-DC converters, motor control, and load switching
This MOSFET is optimized for high efficiency and reliability in power electronics.

Pinout

The SQD50P06-15L_GE3 is a P-channel MOSFET in a TO-252 (DPAK) package with 3 pins (Gate, Drain, Source).
Key Features:
- Voltage Rating: -60V
- Current Rating: -50A (continuous)
- Low On-Resistance (RDS(on)): 15mΩ (max)
- Logic-Level Gate Drive (suitable for 5V/10V drive)
Pin Functions:
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): Connects to the load (negative side for P-channel).
3. Source (S): Connects to the power supply (negative rail).
Commonly used in power switching, motor control, and DC-DC converters.

Application

The SQD50P06-15L_GE3 is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, DC-DC converters, and load switching.
2. Automotive Systems – Electronic control units (ECUs), lighting, and motor drivers.
3. Industrial Applications – Power supplies, inverters, and relay replacements.
4. Consumer Electronics – Battery protection circuits and portable devices.
5. Energy Efficiency – Low-power switching in green energy systems.
Its -15V drain-source voltage (VDS) and 50A current rating make it suitable for medium-power applications requiring efficient switching and thermal performance.

Package

The SQD50P06-15L_GE3 is a PowerTrench® MOSFET in a TO-252 (DPAK) surface-mount package. It features low on-resistance, high efficiency, and is designed for power management applications like DC-DC converters and motor control. The package is compact, with a lead-free and RoHS-compliant design.

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