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TC58NVG2S0FTA00
+Lista de MateriaisIC FLASH 4GBIT PARALLEL 48TSOP I
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FabricanteKioxia America, Inc.
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Peça do Fabricante #TC58NVG2S0FTA00
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Pacote TFSOP-48
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Em Estoque7020
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Especificações
| Atributo | Valor |
| Supplier | Kioxia America, Inc. |
| Package / Case | Tray |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 4Gb (512M x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 25ns |
| Access Time | 25 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
Visão Geral
Description
- Density: approximately 2 Gbit (MLC) of flash memory
- Interface: ONFI-compatible NAND interface (x8 data I/O)
- Architecture: multi-plane/multi-die design for improved throughput
- Usage: requires a NAND flash controller with ECC, wear leveling, and bad-block management
- Typical role: embedded storage in devices such as cameras, mobile devices, and other electronics
For exact specifications—page and block size, erase units, timing, operating voltages, endurance, and packaging—refer to the official datasheet from Kioxia/Toshiba.
Equivalent
Pinout
- Function: Parallel NAND flash memory with an 8-bit data bus (DQ0–DQ7) and standard NAND interface (CLE, ALE, CE#, WE#, RE#, WP#, RB#); includes address lines (A0…), power/GND (Vcc, Vccq, GND). Used for non-volatile storage.
Manufacturer
What kind of company: A Japanese multinational electronics and semiconductor company that designs and produces NAND flash memory and other storage/storage-related products.
Application
- Solid-state drives, USB drives, memory cards, removable storage
- Embedded systems and microcontroller/SoC-based devices needing nonvolatile firmware and data storage
- Mobile devices, digital cameras/camcorders, and other multimedia devices
- Automotive and industrial electronics for firmware storage and data logging
- Consumer electronics such as set-top boxes, smart TVs, tablets
These flash memories are used wherever reliable, high-density nonvolatile storage is required.