FDG6316P vs FDG6332C-PG

Esta comparação detalhada entre FDG6316P e FDG6332C-PG fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification FDG6316P FDG6332C-PG
Supplier - onsemi
Series PowerTrench® PowerTrench®
Part Status Obsolete Obsolete
FET Type - N and P-Channel Complementary
FET Feature Logic Level Gate Standard
Drain to Source Voltage (Vdss) 12V 20V
Current - Continuous Drain(Id) @ 25°C - 700mA (Ta), 600mA (Ta)
Rds On(Max) @ Id Vgs - 300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V
Vgs(th)(Max) @ Id - 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 1.5nC @ 4.5V, 2nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds - 113pF @ 10V, 114pF @ 10V
Power - Max 300mW 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number FDG6316 -
Technology MOSFET (Metal Oxide) -
Configuration 2 P-Channel (Dual) -
Current - Continuous Drain (Id) @ 25°C 700mA -
Rds On (Max) @ Id, Vgs 270mOhm @ 700mA, 4.5V -
Vgs(th) (Max) @ Id 1.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 2.4nC @ 4.5V -
Input Capacitance (Ciss) (Max) @ Vds 146pF @ 6V -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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