IR2117STRPBF vs IR2110STR

Esta comparação detalhada entre IR2117STRPBF e IR2110STR fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IR2117STRPBF

Tecnologias Infineon

Lifecycle: Active
Stock: 1294 PCS
Package: SOIC 8N
Series: PMIC - Gate Drivers

+Lista de Materiais RFQ

Part B

IR2110STR

Tecnologias Infineon

Lifecycle: Active
Stock: 9490 PCS
Package: SOIC-16
Series: PMIC - Gate Drivers

+Lista de Materiais RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IR2117STRPBF	IR2110STR
Part Status	Active	Obsolete
Driven Configuration	High-Side	Half-Bridge
Channel Type	Single	Independent
Number of Drivers	1	2
Gate Type	IGBT, N-Channel MOSFET	IGBT, N-Channel MOSFET
Voltage - Supply	10V ~ 20V	3.3V ~ 20V
Logic Voltage - VILVIH	6V, 9.5V	6V, 9.5V
Current - Peak Output(Source Sink)	250mA, 500mA	2A, 2A
Input Type	Non-Inverting	Non-Inverting
High Side Voltage - Max(Bootstrap)	600 V	500 V
Rise / Fall Time(Typ)	80ns, 40ns	25ns, 17ns
Operating Temperature	-40°C ~ 150°C (TJ)	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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