IR2117STRPBF vs IR2111S

Esta comparação detalhada entre IR2117STRPBF e IR2111S fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IR2117STRPBF

Tecnologias Infineon

Lifecycle: Active
Stock: 1294 PCS
Package: SOIC 8N
Series: PMIC - Gate Drivers

+Lista de Materiais RFQ

Part B

IR2111S

Tecnologias Infineon

Lifecycle: Active
Stock: 9682 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

+Lista de Materiais RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IR2117STRPBF	IR2111S
Part Status	Active	Obsolete
Driven Configuration	High-Side	Half-Bridge
Channel Type	Single	Synchronous
Number of Drivers	1	2
Gate Type	IGBT, N-Channel MOSFET	IGBT, N-Channel MOSFET
Voltage - Supply	10V ~ 20V	10V ~ 20V
Logic Voltage - VILVIH	6V, 9.5V	8.3V, 12.6V
Current - Peak Output(Source Sink)	250mA, 500mA	250mA, 500mA
Input Type	Non-Inverting	Non-Inverting
High Side Voltage - Max(Bootstrap)	600 V	600 V
Rise / Fall Time(Typ)	80ns, 40ns	80ns, 40ns
Operating Temperature	-40°C ~ 150°C (TJ)	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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