Imagens apenas para referência
IPB120N06S4H1ATMA2
+Lista de MateriaisMOSFET N-CH 60V 120A TO263-3
-
FabricanteTecnologias Infineon
-
Peça do Fabricante #IPB120N06S4H1ATMA2
-
Ficha Técnica IPB120N06S4H1ATMA2 DataSheet
-
Em Estoque16108
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 120A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 2.4mOhm @ 100A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 200µA |
| Gate Charge(Qg)(Max) @ Vgs | 270 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 21900 pF @ 25 V |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
Visão Geral
Description
The "IPB120N06S4H1ATMA2" refers to a specific part number for a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. This component is part of the OptiMOS series, known for its efficiency and reliability in power management applications.
Key features of the IPB120N06S4H1ATMA2 include:
1. Voltage and Current Ratings: It is typically designed to handle specific voltage and current levels, often used in applications requiring high power efficiency.
2. Low On-Resistance: This characteristic helps reduce power losses, making it ideal for high-efficiency applications.
3. Thermal Performance: It is engineered to manage thermal loads effectively, often featuring a package that aids in heat dissipation.
4. Application: Commonly used in automotive, industrial, and consumer electronics where efficient power management is crucial, such as in DC-DC converters, motor drives, and power supplies.
These features make it suitable for applications requiring reliable switching and energy conservation, leveraging advanced semiconductor technology to enhance performance. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Key features of the IPB120N06S4H1ATMA2 include:
1. Voltage and Current Ratings: It is typically designed to handle specific voltage and current levels, often used in applications requiring high power efficiency.
2. Low On-Resistance: This characteristic helps reduce power losses, making it ideal for high-efficiency applications.
3. Thermal Performance: It is engineered to manage thermal loads effectively, often featuring a package that aids in heat dissipation.
4. Application: Commonly used in automotive, industrial, and consumer electronics where efficient power management is crucial, such as in DC-DC converters, motor drives, and power supplies.
These features make it suitable for applications requiring reliable switching and energy conservation, leveraging advanced semiconductor technology to enhance performance. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Equivalent
The equivalent products for the IPB120N06S4H1ATMA2 are similar N-channel MOSFETs with comparable specifications, such as:
1. STMicroelectronics STP75N75
2. ON Semiconductor NTP75N06
3. Vishay IRF3205
4. Toshiba TK75A06N1
5. Fairchild (now ON Semiconductor) FDP038AN06A0
These products should match key parameters like voltage, current, and Rds(on) characteristics. Always verify datasheets for precise compatibility.
1. STMicroelectronics STP75N75
2. ON Semiconductor NTP75N06
3. Vishay IRF3205
4. Toshiba TK75A06N1
5. Fairchild (now ON Semiconductor) FDP038AN06A0
These products should match key parameters like voltage, current, and Rds(on) characteristics. Always verify datasheets for precise compatibility.
Features
The IPB120N06S4H1ATMA2 is a power MOSFET manufactured by Infineon Technologies. Key features include:
1. N-Channel MOSFET: Utilizes an n-channel enhancement mode for efficient operation.
2. Voltage Rating: Designed for a maximum drain-source voltage (V_DS) of 60V.
3. Current Rating: Supports a drain current (I_D) of up to 120A.
4. R_DS(on): Exhibits a low on-resistance, typically around 6.9 mΩ, facilitating reduced power loss.
5. Technology: Based on Infineon's OptiMOS™ technology, ensuring high performance and efficiency.
6. Package: Available in a TO-263 package, suitable for surface mounting.
7. Applications: Ideal for use in applications such as DC-DC converters, synchronous rectification, and motor control.
8. Thermal Performance: Designed to provide efficient thermal management to support high power applications.
9. Operating Characteristics: Features a fast switching speed, enhancing performance in high-frequency applications.
These features make it suitable for a variety of high-power and high-efficiency applications.
1. N-Channel MOSFET: Utilizes an n-channel enhancement mode for efficient operation.
2. Voltage Rating: Designed for a maximum drain-source voltage (V_DS) of 60V.
3. Current Rating: Supports a drain current (I_D) of up to 120A.
4. R_DS(on): Exhibits a low on-resistance, typically around 6.9 mΩ, facilitating reduced power loss.
5. Technology: Based on Infineon's OptiMOS™ technology, ensuring high performance and efficiency.
6. Package: Available in a TO-263 package, suitable for surface mounting.
7. Applications: Ideal for use in applications such as DC-DC converters, synchronous rectification, and motor control.
8. Thermal Performance: Designed to provide efficient thermal management to support high power applications.
9. Operating Characteristics: Features a fast switching speed, enhancing performance in high-frequency applications.
These features make it suitable for a variety of high-power and high-efficiency applications.
Pinout
The IPB120N06S4H1ATMA2 is a power MOSFET from Infineon Technologies, part of the OptiMOS™ series. It is an N-channel MOSFET designed for high efficiency and high power density applications. The package for this MOSFET is a TO-263-3, also known as D²PAK, which typically features three pins.
1. Pin Count: The IPB120N06S4H1ATMA2 has three main pins:
- Pin 1: Gate (G)
- Pin 2: Drain (D)
- Pin 3: Source (S)
2. Function:
- Gate: The gate controls the conductivity between the drain and source. Applying a voltage here turns the MOSFET on or off.
- Drain: The drain is the terminal through which the main current flows from source to drain when the MOSFET is on.
- Source: The source is the terminal through which the current leaves the MOSFET.
This MOSFET is used in applications requiring efficient power management, such as in automotive and industrial sectors, where it acts as a switch or amplifier in electronic circuits.
1. Pin Count: The IPB120N06S4H1ATMA2 has three main pins:
- Pin 1: Gate (G)
- Pin 2: Drain (D)
- Pin 3: Source (S)
2. Function:
- Gate: The gate controls the conductivity between the drain and source. Applying a voltage here turns the MOSFET on or off.
- Drain: The drain is the terminal through which the main current flows from source to drain when the MOSFET is on.
- Source: The source is the terminal through which the current leaves the MOSFET.
This MOSFET is used in applications requiring efficient power management, such as in automotive and industrial sectors, where it acts as a switch or amplifier in electronic circuits.
Manufacturer
The IPB120N06S4H1ATMA2 is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in a variety of electronic components and systems. The company focuses on areas such as automotive, industrial power control, power management and multimarket, as well as digital security solutions. Infineon is well-known for producing products that serve applications in a wide range of industries, including automotive electronics, communications, consumer electronics, and industrial applications. They aim to offer solutions that contribute to energy efficiency, mobility, and security.
Application
The IPB120N06S4H1ATMA2 is a power MOSFET typically used in various applications requiring efficient power management and switching. Key application areas include:
1. Automotive Systems: Used in electric vehicles and hybrid systems for battery management and motor control.
2. Power Supplies: Employed in switched-mode power supplies (SMPS) for efficient power conversion.
3. Industrial Automation: Utilized in motor drives and robotics for controlling actuators and motors.
4. Telecommunications: Used in base stations and networking equipment for power amplification and regulation.
5. Consumer Electronics: Implemented in devices like TVs and computers for internal power management.
These applications benefit from the MOSFET's low on-resistance and high efficiency.
1. Automotive Systems: Used in electric vehicles and hybrid systems for battery management and motor control.
2. Power Supplies: Employed in switched-mode power supplies (SMPS) for efficient power conversion.
3. Industrial Automation: Utilized in motor drives and robotics for controlling actuators and motors.
4. Telecommunications: Used in base stations and networking equipment for power amplification and regulation.
5. Consumer Electronics: Implemented in devices like TVs and computers for internal power management.
These applications benefit from the MOSFET's low on-resistance and high efficiency.
Package
The IPB120N06S4H1ATMA2 is a power MOSFET from Infineon Technologies, typically packaged in a TO-263 (D2PAK) package. This package is designed for surface mounting and is commonly used in power applications due to its efficient thermal performance.
