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IPD60N10S4L12ATMA1
+Lista de MateriaisMOSFET N-CH 100V 60A TO252-3
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FabricanteTecnologias Infineon
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Peça do Fabricante #IPD60N10S4L12ATMA1
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Ficha Técnica IPD60N10S4L12ATMA1 DataSheet
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Especificações
| Atributo | Valor |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 60A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 12mOhm @ 60A, 10V |
| Vgs(th)(Max) @ Id | 2.1V @ 46µA |
| Gate Charge(Qg)(Max) @ Vgs | 49 nC @ 10 V |
| Vgs(Max) | ±16V |
| Input Capacitance(Ciss)(Max) @ Vds | 3170 pF @ 25 V |
| Power Dissipation (Max) | 94W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-313 |
Visão Geral
Description
The IPD60N10S4L12ATMA1 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies. It is part of the OptiMOS™ series, which is known for its high efficiency and excellent performance in power management applications. This specific model is characterized by a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 60A, making it suitable for various high-power applications such as DC-DC converters, motor drives, and load switches.
The IPD60N10S4L12ATMA1 features low on-resistance and fast switching capabilities, which help to minimize power loss and heat generation. It also includes robust avalanche and dv/dt ratings, ensuring reliability in demanding conditions. Its small package size further aids in its integration into compact electronic designs. The device is optimized for use in both industrial and consumer applications, providing a balance of performance, efficiency, and cost-effectiveness. Overall, the IPD60N10S4L12ATMA1 is a versatile component for engineers looking to optimize power efficiency in electronic circuits.
The IPD60N10S4L12ATMA1 features low on-resistance and fast switching capabilities, which help to minimize power loss and heat generation. It also includes robust avalanche and dv/dt ratings, ensuring reliability in demanding conditions. Its small package size further aids in its integration into compact electronic designs. The device is optimized for use in both industrial and consumer applications, providing a balance of performance, efficiency, and cost-effectiveness. Overall, the IPD60N10S4L12ATMA1 is a versatile component for engineers looking to optimize power efficiency in electronic circuits.
Equivalent
The IPD60N10S4L-12ATMA1 is an N-channel MOSFET manufactured by Infineon. Equivalent products could include similar N-channel MOSFETs with comparable voltage and current ratings from other manufacturers. Some potential equivalents are:
1. IRF3205 - by International Rectifier.
2. FQP30N06L - by ON Semiconductor.
3. STP55NF06 - by STMicroelectronics.
Always verify specific electrical characteristics to ensure full compatibility for your application.
1. IRF3205 - by International Rectifier.
2. FQP30N06L - by ON Semiconductor.
3. STP55NF06 - by STMicroelectronics.
Always verify specific electrical characteristics to ensure full compatibility for your application.
Features
The IPD60N10S4L12ATMA1 is a power MOSFET produced by Infineon Technologies. It features a 100V drain-source voltage (V_DS) and a continuous drain current of 60A. The component belongs to the OptiMOS™ 4 series, known for high efficiency and low switching losses. It has a low on-state resistance (R_DS(on)) of approximately 12 mΩ, which minimizes power dissipation during operation. The MOSFET comes in a TO-252 surface-mount package, making it suitable for compact electronic designs.
This device is designed for use in a variety of applications, including DC-DC converters, motor drives, and power management systems. It offers high-speed switching capabilities, enhancing performance in applications requiring high efficiency and power density. Additionally, it provides ruggedness and reliability under challenging operational conditions. The IPD60N10S4L12ATMA1 is well-suited for electronics that require efficient power handling, such as automotive and industrial applications.
This device is designed for use in a variety of applications, including DC-DC converters, motor drives, and power management systems. It offers high-speed switching capabilities, enhancing performance in applications requiring high efficiency and power density. Additionally, it provides ruggedness and reliability under challenging operational conditions. The IPD60N10S4L12ATMA1 is well-suited for electronics that require efficient power handling, such as automotive and industrial applications.
Pinout
The IPD60N10S4L12ATMA1 is a power MOSFET from Infineon Technologies. It typically comes in a package with three pins. The pin configuration for this MOSFET is as follows:
1. Gate (G): This is the control pin that modulates the conductivity of the MOSFET. By applying a voltage to the gate, you can control the electrical connection between the drain and source.
2. Drain (D): This is the terminal through which the main current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This is the terminal that serves as the return path for the main current flowing through the MOSFET.
This MOSFET is typically used in applications requiring efficient power management and switching, such as in power supplies, motor drives, and other electronic circuits. It offers features like low on-state resistance and fast switching capability, which enhance performance in these applications.
1. Gate (G): This is the control pin that modulates the conductivity of the MOSFET. By applying a voltage to the gate, you can control the electrical connection between the drain and source.
2. Drain (D): This is the terminal through which the main current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This is the terminal that serves as the return path for the main current flowing through the MOSFET.
This MOSFET is typically used in applications requiring efficient power management and switching, such as in power supplies, motor drives, and other electronic circuits. It offers features like low on-state resistance and fast switching capability, which enhance performance in these applications.
Manufacturer
The IPD60N10S4L12ATMA1 is manufactured by Infineon Technologies. Infineon is a German semiconductor company that focuses on designing, developing, manufacturing, and marketing a broad range of semiconductor solutions. These solutions are used in applications such as automotive electronics, industrial power control, power management, and digital security solutions. The company is known for its innovation in areas like power semiconductors and microcontrollers. Infineon's products are critical components in various electronic devices and systems, contributing to advancements in automotive technology, energy efficiency, and secure communications.
Application
The IPD60N10S4L12ATMA1 is a power MOSFET designed for various applications that require efficient power management. Key application areas include:
1. Automotive Systems: Used in applications such as electronic control units and motor drives due to its high efficiency and reliability.
2. Industrial Automation: Suitable for industrial motor control and robotics.
3. Power Supplies: Utilized in DC-DC converters and power management systems to improve efficiency.
4. Consumer Electronics: Used in power management for devices like televisions and home appliances.
5. Renewable Energy Systems: Employed in solar inverters and other renewable energy applications for enhanced energy conversion efficiency.
1. Automotive Systems: Used in applications such as electronic control units and motor drives due to its high efficiency and reliability.
2. Industrial Automation: Suitable for industrial motor control and robotics.
3. Power Supplies: Utilized in DC-DC converters and power management systems to improve efficiency.
4. Consumer Electronics: Used in power management for devices like televisions and home appliances.
5. Renewable Energy Systems: Employed in solar inverters and other renewable energy applications for enhanced energy conversion efficiency.
Package
The IPD60N10S4L12ATMA1 is a power MOSFET typically available in a TO-252 (DPAK) package. This package type provides good thermal performance and is suitable for surface mounting on PCBs.
