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IPW60R199CP
+Lista de Materiais16A, 600V, 0.199OHM, N-CHANNEL M
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FabricanteTecnologias Infineon
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Peça do Fabricante #IPW60R199CP
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Ficha Técnica IPW60R199CP DataSheet
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Especificações
| Atributo | Valor |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Part Status | Active |
Visão Geral
Description
Features
- Vds: 600 V; Id: up to ~60 A
- Rds(on): ~0.199 Ω (max) at Vgs ≈ 10 V
- Vgs(th): typically 2–4 V; requires ~10 V drive for full conduction
- Fast switching with low gate charge; suitable for high-frequency switching
- Rugged body diode and avalanche energy rating for protection in switching circuits
- Wide operating temp: -55°C to +150°C
- Package: CPak/TO-252-3 style; Pb-free, RoHS compliant
- Typical applications: high-voltage switch-mode power supplies, offline converters, motor drives, inverters
Note: Values are typical/representative; consult the datasheet for exact limits and conditions.
Pinout
Function: N-channel enhancement-mode power MOSFET used as a high-current switching device in power electronics.
Manufacturer
- What kind of company: A German multinational semiconductor company and one of the world’s leading producers of power semiconductors and related electronics (auto, industrial, and security applications).
Application
- Automotive power electronics: DC–DC converters, motor drives, e‑drives
- Industrial drives: servo/AC motor drives, pumps and fans
- Power conversion: switch‑mode power supplies, PFC stages, DC‑DC front ends
- Renewable energy: solar inverters, battery/ESS inverters
- Uninterruptible power supplies (UPS) and energy-storage systems
- Other high‑efficiency inverters and motor-control applications requiring fast switching and reliability.