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IRF2805PBF
+Lista de MateriaisMOSFET N-CH 55V 75A TO220AB
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRF2805PBF
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Ficha Técnica IRF2805PBF DataSheet
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Pacote TO-220-3
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Especificações
| Atributo | Valor |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 75A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 4.7mOhm @ 104A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 230 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 5110 pF @ 25 V |
| Power Dissipation (Max) | 330W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Visão Geral
Description
The MOSFET is housed in a TO-220 package, which provides efficient heat dissipation and easy mounting to heatsinks. Its silicon construction ensures robustness and reliability, while the lead-free, RoHS-compliant packaging makes it environmentally friendly.
Key features include a low gate charge, enhancing its performance in high-frequency applications, and a fully avalanche-rated design, which ensures it can withstand high-energy pulses. Typically used in DC-DC converters, power supplies, and automotive applications, the IRF2805PBF is valued for its balance of performance and cost-effectiveness.
Overall, the IRF2805PBF is a versatile and dependable component for engineers seeking efficient power management solutions in a compact form factor.
Equivalent
1. STMicroelectronics STP150NF75
2. Vishay SiHP28N50D
3. ON Semiconductor NTP10N50
4. Infineon IPP50R280CE
These equivalents are selected based on similar voltage and current ratings, package type, and performance characteristics. Always verify specifications with the manufacturer's datasheet to ensure compatibility for your specific application.
Features
1. Voltage and Current Ratings: The device typically operates with a drain-source voltage (V_DS) of 55V and supports a continuous drain current (I_D) of up to 82A.
2. Low On-Resistance: It exhibits a low R_DS(on) value, ensuring minimal power loss and improved efficiency in switching applications.
3. High-Speed Switching: The MOSFET supports fast switching speeds, making it suitable for high-frequency applications.
4. Thermal Performance: The TO-220 packaging enhances thermal management, allowing effective heat dissipation.
5. Ruggedness: The IRF2805PBF is designed to handle high power and energy levels, providing robustness against transient voltage spikes.
6. Applications: Commonly used in power supplies, motor drives, DC-DC converters, and other power management circuits.
7. RoHS Compliant: The "PBF" suffix indicates that it is lead-free and RoHS compliant, adhering to environmental safety standards.
These features make the IRF2805PBF a versatile choice for designers seeking reliable performance in power electronics.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate modulates the conductivity between the drain and source.
2. Drain (D): The drain carries the main current of the MOSFET. It's connected to the load in most applications.
3. Source (S): The source pin is where the current enters the MOSFET. It is often connected to ground in many configurations.
The IRF2805PBF is known for its high current handling capability and low on-resistance, making it suitable for applications like high-power switching and motor control.