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IRF530NSTRLPBF
+Lista de MateriaisMOSFET N-CH 100V 17A D2PAK
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRF530NSTRLPBF
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Ficha Técnica IRF530NSTRLPBF DataSheet
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Pacote TO-263-3
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 17A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 90mOhm @ 9A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 37 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 920 pF @ 25 V |
| PowerDissipation(Max) | 3.8W (Ta), 70W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
Visão Geral
Description
The IRF530NSTRLPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for fast switching applications. It is part of the HEXFET® power MOSFET series by Infineon Technologies, known for their efficiency and reliability.
Key features include a low on-state resistance (R_DS(on)) of around 0.16 ohms, which minimizes power loss and heat generation, and a high drain-to-source voltage (V_DS) rating of 100V, making it suitable for various power applications. The device can handle continuous drain currents up to 17A.
The IRF530NSTRLPBF comes in a TO-252 (D-Pak) surface-mount package, which is compact and suitable for high-density circuit designs. It is often used in applications like DC-DC converters, motor drives, and power supply circuits, where efficient power management is crucial. The "PbF" suffix indicates it is lead-free and RoHS compliant, aligning with environmental standards.
Overall, this MOSFET offers a balance of performance and size, making it a versatile choice for designers needing a reliable switching component.
Key features include a low on-state resistance (R_DS(on)) of around 0.16 ohms, which minimizes power loss and heat generation, and a high drain-to-source voltage (V_DS) rating of 100V, making it suitable for various power applications. The device can handle continuous drain currents up to 17A.
The IRF530NSTRLPBF comes in a TO-252 (D-Pak) surface-mount package, which is compact and suitable for high-density circuit designs. It is often used in applications like DC-DC converters, motor drives, and power supply circuits, where efficient power management is crucial. The "PbF" suffix indicates it is lead-free and RoHS compliant, aligning with environmental standards.
Overall, this MOSFET offers a balance of performance and size, making it a versatile choice for designers needing a reliable switching component.
Equivalent
The IRF530NSTRLPBF is a N-channel MOSFET. Equivalent products include:
1. STMicroelectronics' STP60NF06
2. ON Semiconductor's FDP6030BL
3. Vishay's SiHF530
4. Infineon's IPB60R299CP
5. Fairchild's FQP50N06
These alternatives offer similar voltage and current ratings, though exact parameters and performance can vary slightly. Always compare datasheets to ensure compatibility with your specific application.
1. STMicroelectronics' STP60NF06
2. ON Semiconductor's FDP6030BL
3. Vishay's SiHF530
4. Infineon's IPB60R299CP
5. Fairchild's FQP50N06
These alternatives offer similar voltage and current ratings, though exact parameters and performance can vary slightly. Always compare datasheets to ensure compatibility with your specific application.
Features
The IRF530NSTRLPBF is a N-channel MOSFET known for its suitability in various switching applications. Key features include:
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 17A at 25°C.
2. On-Resistance: The device offers a low on-resistance (R_DS(on)) of approximately 0.16 ohms, facilitating efficient current conduction with minimal power loss.
3. Gate Charge: It has a total gate charge (Q_G) of about 29 nC, allowing for efficient switching at varying frequencies.
4. Thermal Characteristics: The MOSFET is designed to operate effectively across a broad temperature range, with a maximum junction temperature of 175°C.
5. Packaging: The device is available in a TO-220 package, which provides reliable performance and ease of mounting.
6. Applications: The IRF530NSTRLPBF is typically used in power supply circuits, motor control, inverters, and other applications requiring robust switching capabilities.
These features make it a versatile choice for engineers designing high-efficiency power management systems.
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 17A at 25°C.
2. On-Resistance: The device offers a low on-resistance (R_DS(on)) of approximately 0.16 ohms, facilitating efficient current conduction with minimal power loss.
3. Gate Charge: It has a total gate charge (Q_G) of about 29 nC, allowing for efficient switching at varying frequencies.
4. Thermal Characteristics: The MOSFET is designed to operate effectively across a broad temperature range, with a maximum junction temperature of 175°C.
5. Packaging: The device is available in a TO-220 package, which provides reliable performance and ease of mounting.
6. Applications: The IRF530NSTRLPBF is typically used in power supply circuits, motor control, inverters, and other applications requiring robust switching capabilities.
These features make it a versatile choice for engineers designing high-efficiency power management systems.
Pinout
The IRF530NSTRLPBF is a power MOSFET transistor featuring a standard pin configuration typical for such components packaged in a TO-220 package. It generally has three pins:
1. Gate (G): This pin is used to control the on/off state of the MOSFET. A voltage applied to the gate controls the current flow between the drain and source.
2. Drain (D): The drain is where the current flows out of the MOSFET when it is turned on. It is the terminal through which the output current is supplied.
3. Source (S): The source is where the current flows into the MOSFET. It is usually connected to the ground in most applications.
The IRF530NSTRLPBF is utilized in various applications, including power management, motor control, and switching regulators, due to its capability to handle significant power levels and fast switching speeds.
1. Gate (G): This pin is used to control the on/off state of the MOSFET. A voltage applied to the gate controls the current flow between the drain and source.
2. Drain (D): The drain is where the current flows out of the MOSFET when it is turned on. It is the terminal through which the output current is supplied.
3. Source (S): The source is where the current flows into the MOSFET. It is usually connected to the ground in most applications.
The IRF530NSTRLPBF is utilized in various applications, including power management, motor control, and switching regulators, due to its capability to handle significant power levels and fast switching speeds.
Manufacturer
The IRF530NSTRLPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that designs, manufactures, and supplies a wide variety of semiconductor products. These products are used in different applications, including automotive, industrial power control, power management, and digital security solutions. Infineon is known for its innovation in power semiconductors, microcontrollers, sensors, and automotive electronics, making it a key player in the global semiconductor industry.
Application
The IRF530NSTRLPBF is a N-channel MOSFET commonly used in various applications due to its efficiency and performance. Key application areas include:
1. Power Management: Utilized in DC-DC converters and voltage regulation circuits.
2. Motor Control: Employed in motor drivers for controlling speed and direction.
3. Switching Applications: Used in high-speed switching applications for power supplies and inverters.
4. Audio Amplifiers: Serves in audio amplification circuits for driving speakers.
5. Lighting Systems: Applied in LED lighting and HID systems.
6. Automotive Electronics: Found in automotive control systems and electric vehicles.
Its ability to handle high current and voltage makes it suitable for these power-related applications.
1. Power Management: Utilized in DC-DC converters and voltage regulation circuits.
2. Motor Control: Employed in motor drivers for controlling speed and direction.
3. Switching Applications: Used in high-speed switching applications for power supplies and inverters.
4. Audio Amplifiers: Serves in audio amplification circuits for driving speakers.
5. Lighting Systems: Applied in LED lighting and HID systems.
6. Automotive Electronics: Found in automotive control systems and electric vehicles.
Its ability to handle high current and voltage makes it suitable for these power-related applications.
Package
The IRF530NSTRLPBF is a type of N-channel MOSFET that comes in a D²PAK (TO-263) surface-mount package. This package type is suitable for applications requiring efficient thermal management and high power handling in surface-mount technology (SMT) designs.
