Imagens apenas para referência
IRF7220
+Lista de MateriaisMOSFET P-CH 14V 11A 8SO
-
FabricanteTecnologias Infineon
-
Peça do Fabricante #IRF7220
-
Ficha Técnica IRF7220 DataSheet
-
Pacote SOIC-8
-
Em Estoque2310
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 14 V |
| Current - Continuous Drain(Id) @ 25°C | 11A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 12mOhm @ 11A, 4.5V |
| Vgs(th)(Max) @ Id | 600mV @ 250µA (Min) |
| Gate Charge(Qg)(Max) @ Vgs | 125 nC @ 5 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 8075 pF @ 10 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
Visão Geral
Description
Key features of the IRF7220 include a low on-resistance, high-speed switching capability, and a robust design that can handle significant levels of current and voltage. It typically finds applications in DC-DC converters, motor control, and other power management systems where efficient power handling is crucial. The device is designed to operate efficiently with a low gate charge, allowing for reduced power loss and improved overall system performance. Its dual configuration enables designers to implement complex switching solutions in a simplified manner, making it a versatile component in modern electronic designs.
Equivalent
Features
1. Dual N-Channel Configuration: Contains two N-channel MOSFETs in one package, enabling compact design and efficient use of board space.
2. Low On-Resistance: Exhibits a low R_DS(on), which reduces conduction losses and improves efficiency in power applications.
3. High-Speed Switching: Capable of fast switching speeds, making it suitable for high-frequency applications.
4. Compact Package: Typically available in a compact package, such as SO-8, which is suitable for space-constrained designs.
5. Gate Charge: Low gate charge (Q_g) facilitates simpler drive requirements and lowers switching losses.
6. Temperature Range: Designed to operate efficiently over a wide temperature range, enhancing reliability in various environments.
7. Applications: Commonly used in DC-DC converters, battery management systems, and other power management applications.
These features make the IRF7220 an attractive option for designers looking for a compact and efficient MOSFET solution in various electronic applications.
Pinout
1. Pin 1 (G1): Gate of the first N-channel MOSFET.
2. Pin 2 (S1): Source of the first N-channel MOSFET.
3. Pin 3 (S1): Source of the first N-channel MOSFET (common with Pin 2).
4. Pin 4 (D1): Drain of the first N-channel MOSFET.
5. Pin 5 (D2): Drain of the second N-channel MOSFET.
6. Pin 6 (S2): Source of the second N-channel MOSFET.
7. Pin 7 (S2): Source of the second N-channel MOSFET (common with Pin 6).
8. Pin 8 (G2): Gate of the second N-channel MOSFET.
The IRF7220 is used in applications requiring efficient power management, such as power supplies and motor controllers, due to its low on-resistance and fast switching capabilities.
Manufacturer
Application
1. DC-DC Converters: Used in power management for converting DC voltage levels efficiently in various electronic devices.
2. Synchronous Rectification: Enhances efficiency in power supplies by replacing diodes with MOSFETs to reduce losses.
3. Load Switching: Suitable for controlling power to different loads in consumer electronics and industrial systems.
4. Motor Control: Utilized in controlling small motors, offering efficient operation and speed control.
5. Battery Management: Applied in battery protection and charging circuits to manage power flow effectively.
These applications benefit from the IRF7220's low on-resistance and high-speed switching capabilities.