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IRF7831TRPBF
+Lista de MateriaisMOSFET N-CH 30V 21A 8SO
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRF7831TRPBF
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Ficha Técnica IRF7831TRPBF DataSheet
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Especificações
| Atributo | Valor |
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 21A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 3.6mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 2.35V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 60 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 6240 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
Visão Geral
Description
Key features of the IRF7831TRPBF include a high-speed switching capability, robust design, and low RDS(on) (drain-source on-resistance), which minimizes power loss and ensures efficient operation. The device is typically packaged in a surface-mount form factor, facilitating its integration into compact circuit designs. It also adheres to RoHS compliance, indicating that it meets standards for the restriction of hazardous substances.
Overall, the IRF7831TRPBF is valued for its efficiency, reliability, and high-power handling capabilities, making it a preferred choice for designers looking to optimize energy use in their electronic systems.
Equivalent
1. NXP 2N7002
2. Vishay Si2312
3. Infineon IPD50N06S4-10
4. ON Semiconductor NTD3055-150M
Always verify the specifications such as voltage, current ratings, and package type to ensure full compatibility for your specific application.
Features
The MOSFET is packaged in a compact 8-pin SO-8 (Dual) configuration, making it suitable for space-constrained designs. It is lead-free and RoHS compliant, aligning with environmental standards. The IRF7831TRPBF is typically used in applications such as DC-DC converters, load switching, and power management systems, where efficiency and reliability are critical. Its robust design ensures optimal performance even in demanding environments.
Pinout
1. Drain (D): Connects to the load; it's the main terminal through which current flows from the source to the drain when the device is on.
2. Gate (G): Controls the MOSFET's operation. A voltage applied here allows current to flow between the drain and source.
3. Source (S): Connects to the ground or return path of the circuit.
The IRF7831TRPBF is designed for efficiency and high-speed performance in DC-DC converters and other power management applications. It is known for its low on-resistance and high power handling capability. For exact pin configuration, referring to the manufacturer's datasheet is recommended, as the DirectFET package can have unique configuration considerations.
Manufacturer
Application
1. DC-DC Converters: It is used in voltage regulation and conversion circuits.
2. Power Management: Ideal for battery-powered devices requiring efficient power control.
3. Motor Control: Used in driving motors in automotive and industrial settings.
4. Switching Regulators: Suitable for high-frequency operation in switching power supplies.
5. Load Switches: Employed for controlling power distribution in electronic devices.
6. Consumer Electronics: Used in devices requiring compact and efficient power solutions.
These applications benefit from its low on-resistance and fast switching capabilities.