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IRF8010PBF
+Lista de MateriaisMOSFET N-CH 100V 80A TO220AB
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRF8010PBF
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Ficha Técnica IRF8010PBF DataSheet
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Pacote TO-220-3
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Especificações
| Atributo | Valor |
| Package / Case | Bulk,Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 80A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 15mOhm @ 45A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 120 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3830 pF @ 25 V |
| Power Dissipation (Max) | 260W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Visão Geral
Description
Key features of the IRF8010PBF include a maximum drain-source voltage (V_DS) of 100V, a continuous drain current (I_D) of up to 75A, and a low on-state resistance (R_DS(on)) of about 8 mΩ, which contributes to reduced power losses and improved efficiency. It is available in a TO-220 package, making it suitable for through-hole mounting.
This MOSFET is typically used in applications that require high power efficiency and reliability, such as power supplies, motor controllers, and DC-DC converters. Its lead-free, halogen-free construction makes it environmentally friendly and compliant with various regulatory standards.
Equivalent
1. NTP6415ANG (ON Semiconductor)
2. FDP8870 (ON Semiconductor)
3. STP80NF10 (STMicroelectronics)
4. IPP80N10S3L-05 (Infineon Technologies)
5. FQP50N06 (Fairchild Semiconductor)
Ensure to check the datasheets for compatibility in terms of voltage, current, and other specifications before substituting.
Features
1. N-Channel MOSFET: Suitable for high-speed switching applications.
2. Drain-Source Voltage (Vds): 100V, making it apt for medium voltage applications.
3. Continuous Drain Current (Id): 75A, allowing substantial current handling.
4. Rds(on): Low on-state resistance of 10 mΩ, minimizing power losses.
5. Fast Switching: Capable of rapid switching, enhancing efficiency in circuits.
6. Thermal Resistance: Efficient thermal management with low junction-to-case thermal resistance.
7. Package Type: Available in standard TO-220, providing good heat dissipation and ease of mounting.
8. Pb-Free: Environmentally friendly with lead-free construction.
9. Applications: Commonly used in power management, motor drives, and DC-DC converters.
These features make the IRF8010PBF a versatile choice for various power electronic applications where efficiency and high current capacity are required.
Pinout
- Pin Count: It is typically housed in a TO-220 package, which has 3 pins.
- Function:
- Pin 1 (Gate): This pin is used to control the MOSFET. A voltage applied here can turn the MOSFET on or off.
- Pin 2 (Drain): This pin is connected to the load and is where the main current flows when the MOSFET is on.
- Pin 3 (Source): This pin is connected to the ground or the return path of the circuit.
The IRF8010PBF is an N-channel MOSFET, often used in various power supply and motor control applications due to its efficiency and reliability. It is designed to handle high currents and voltages, making it suitable for high-power applications.
