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IRFB4212PBF
+Lista de MateriaisMOSFET N-CH 100V 18A TO220AB
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRFB4212PBF
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Especificações
| Atributo | Valor |
| Supplier | Infineon Technologies |
| Package / Case | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 18A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 72.5mOhm @ 13A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 23 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 550 pF @ 50 V |
| Power Dissipation (Max) | 60W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Visão Geral
Description
IRFB4212PBF is a Pb-free, N-channel power MOSFET (enhancement mode) from International Rectifier/Infineon. It is intended for switching power electronics.
Key points:
- Voltage/current: designed for low-voltage, high-current switching (typical Vds around 42 V; capable of handling tens of amperes, depending on package and cooling).
- On-resistance: low Rds(on) for efficient switching (value varies with temperature and gate drive; check datasheet for exact numbers).
- Gate drive: best driven at around 10 V for full enhancement; not guaranteed at very low Vgs.
- Package: Pb-free power package (PBF suffix indicates RoHS/Pb-free); common D2PAK/TO-263 style.
- Applications: synchronous buck converters, motor drivers, and other high-current, low-to-moderate voltage switching circuits.
Note: For precise electrical characteristics (Rds(on) vs. temperature, Qgs/Qgd, Ciss, SOA, etc.), consult the official datasheet.
Key points:
- Voltage/current: designed for low-voltage, high-current switching (typical Vds around 42 V; capable of handling tens of amperes, depending on package and cooling).
- On-resistance: low Rds(on) for efficient switching (value varies with temperature and gate drive; check datasheet for exact numbers).
- Gate drive: best driven at around 10 V for full enhancement; not guaranteed at very low Vgs.
- Package: Pb-free power package (PBF suffix indicates RoHS/Pb-free); common D2PAK/TO-263 style.
- Applications: synchronous buck converters, motor drivers, and other high-current, low-to-moderate voltage switching circuits.
Note: For precise electrical characteristics (Rds(on) vs. temperature, Qgs/Qgd, Ciss, SOA, etc.), consult the official datasheet.
Equivalent
I need the device’s key ratings to give exact cross-references. Please share the IRFB4212PBF datasheet or its ratings (Vds, Id, Rds(on), package). With that, I can list exact equivalents from Infineon, ST, Onsemi, Vishay, etc. Without those specs, I can’t reliably identify equivalents.
Features
IRFB4212PBF is an N-channel, enhancement-mode power MOSFET (Pb-free, PBF). Key features include:
- High-voltage blocking: around 1200 V
- Current capability: tens of amps (typical ~42 A range)
- Low on-resistance for efficient conduction
- Fast switching with trench MOS technology and low gate charge
- Rugged performance: avalanche energy rating and robust body diode
- Pb-free, RoHS compliant packaging
- Suitable for high-efficiency offline, SMPS, PFC, motor drives, and other power-switching applications
- Available in standard Pb-free power packages (check datasheet for exact package type)
Note: For exact electrical specs (Vds, Id, Rds(on), Qg) and package details, refer to the datasheet.
- High-voltage blocking: around 1200 V
- Current capability: tens of amps (typical ~42 A range)
- Low on-resistance for efficient conduction
- Fast switching with trench MOS technology and low gate charge
- Rugged performance: avalanche energy rating and robust body diode
- Pb-free, RoHS compliant packaging
- Suitable for high-efficiency offline, SMPS, PFC, motor drives, and other power-switching applications
- Available in standard Pb-free power packages (check datasheet for exact package type)
Note: For exact electrical specs (Vds, Id, Rds(on), Qg) and package details, refer to the datasheet.
Pinout
IRFB4212PBF is an N-channel enhancement-mode power MOSFET. It has 3 pins: Gate (G), Drain (D), Source (S), plus a drain tab (connected to Drain). The tab serves as an additional Drain connection and heat spreader. Used as a high-power switch controlling current between Drain and Source via the Gate.
Manufacturer
Infineon Technologies AG. It is a German multinational semiconductor company (formerly International Rectifier, acquired by Infineon). It designs and manufactures semiconductor devices and system solutions, including power semiconductors, for automotive, industrial, and security applications; one of the world's largest semiconductor makers.
Application
IRFB4212PBF is an N-channel, Pb-free power MOSFET suitable for fast-switching, high-current applications. Common use areas include:
- Switch-mode power supplies (SMPS), DC-DC converters, and PFC stages
- Motor-drive inverters for BLDC/stepper motors
- Renewable-energy converters (solar inverters, battery storage)
- Uninterruptible power supplies (UPS) and telecom power supplies
- Automotive power management and DC-DC buck/boost stages
- High-efficiency switching circuits (e.g., class-D audio)
- Switch-mode power supplies (SMPS), DC-DC converters, and PFC stages
- Motor-drive inverters for BLDC/stepper motors
- Renewable-energy converters (solar inverters, battery storage)
- Uninterruptible power supplies (UPS) and telecom power supplies
- Automotive power management and DC-DC buck/boost stages
- High-efficiency switching circuits (e.g., class-D audio)
Package
D2PAK (TO-263) surface-mount package, Pb-free (PBF).
