IRFL4310TRPBF

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IRFL4310TRPBF

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MOSFET N-CH 100V 1.6A SOT223

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Especificações

Atributo Valor
Supplier Infineon Technologies
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 1.6A (Ta)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 200mOhm @ 1.6A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 25 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 330 pF @ 25 V
Power Dissipation (Max) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223

Visão Geral

Description

The IRFL4310TRPBF is a specific model of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for applications requiring high efficiency and performance, typically used in power management systems, switching circuits, and motor drives.
Key characteristics of the IRFL4310TRPBF include:
- N-Channel MOSFET: This type is commonly used for its efficiency in switching applications.
- Voltage and Current Ratings: It usually supports high voltage and current ratings, making it suitable for robust applications.
- Low On-Resistance: This feature minimizes power loss and heat generation, enhancing device efficiency.
- Fast Switching Speed: It offers quick response times, important for high-frequency applications.
- Packaging: Often comes in a compact, surface-mount package such as a TO-252, facilitating easy integration into circuit boards.
The device is key in applications like DC-DC converters, automotive systems, and other electronics requiring efficient power handling. It is favored for its balance between performance and reliability. Always refer to the datasheet for precise specifications and application guidelines.

Equivalent

The IRFL4310TRPBF is an N-channel MOSFET. Equivalent products include the Nexperia BUK9Y12-40E, ON Semiconductor NTD4906N, and Vishay Siliconix SI2310DS. It's important to compare specifications like voltage rating, current handling, and Rds(on) to ensure compatibility with your application. Always verify with the manufacturer's datasheets to confirm the equivalency.

Features

The IRFL4310TRPBF is a MOSFET transistor known for its high efficiency and reliability. Key features include:
1. Voltage and Current Ratings: It typically handles a maximum voltage of around 100V and a continuous drain current of approximately 8.3A, making it suitable for various applications in power management.
2. Low On-Resistance: The device offers low on-resistance, which minimizes power loss and improves efficiency, particularly important for applications requiring high-speed switching.
3. Package Type: It usually comes in a surface-mount package (such as SO-8), facilitating easy integration into compact circuit designs.
4. Thermal Performance: The MOSFET is designed to manage thermal dissipation effectively, which enhances its performance in high-temperature environments.
5. Ruggedness: It is engineered to withstand voltage spikes and current surges, ensuring durability and longevity in demanding applications.
6. Applications: Commonly used in DC-DC converters, motor control circuits, and power management systems due to its robust performance characteristics.
These features make the IRFL4310TRPBF a versatile component for various electronic applications requiring efficient power handling and reliability.

Pinout

The IRFL4310TRPBF is a power MOSFET transistor produced by Infineon Technologies. It is part of the HEXFET® power MOSFET family designed for high-efficiency power conversion applications. This component is typically used in applications such as DC-DC converters and motor control.
The IRFL4310TRPBF is packaged in a TO-252 (DPAK) package, which is a surface-mount type. This package has three pins, which are as follows:
1. Gate (G): The gate terminal is used to control the MOSFET. Applying a voltage to this pin enables or disables the flow of current between the drain and source.
2. Drain (D): The drain pin is where the current enters the MOSFET when it is in the "on" state.
3. Source (S): The source pin is where the current exits the MOSFET. It is typically connected to the ground or the negative side of the load.
This MOSFET is designed to handle high currents with low on-state resistance, making it efficient for switching applications.

Manufacturer

The IRFL4310TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that designs, develops, produces, and markets a broad range of semiconductor solutions. These solutions are used in various electronic systems, addressing sectors such as automotive, industrial, consumer electronics, security, and IoT (Internet of Things). Infineon is known for its innovation and quality in the semiconductor industry, providing products like microcontrollers, power semiconductors, sensors, and security ICs. The company is recognized for its efforts in sustainable technologies and contributes significantly to energy efficiency, mobility, and security solutions globally.

Application

The IRFL4310TRPBF is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in various applications. It is well-suited for power management tasks, such as DC-DC converters and power supplies, due to its efficient switching capabilities. This component is ideal for use in automotive applications, battery-powered devices, and portable electronics, where space and power efficiency are critical. Additionally, it can be employed in motor control systems and audio amplifiers. Its compact form factor and robust performance make it a versatile choice for designers looking to optimize power efficiency and manage thermal performance in compact electronic systems.

Package

The IRFL4310TRPBF is a MOSFET packaged in a Surface-Mount Device (SMD) form known as a Small Outline Transistor (SOT)-223. This package type is designed for efficient thermal performance and compact size, suitable for high-density electronics applications.

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