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IRFR5505
+Lista de MateriaisMOSFET P-CH 55V 18A DPAK
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRFR5505
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Pacote TO-252
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Especificações
| Atributo | Valor |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 18A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 110mOhm @ 9.6A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 32 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 650 pF @ 25 V |
| Power Dissipation (Max) | 57W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
Visão Geral
Description
The IRFR5505 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification purposes. It belongs to the family of N-channel MOSFETs, which are favored for their efficiency and fast switching capabilities. This particular component is designed to handle high power loads, making it suitable for applications like power supplies, motor drivers, and DC-DC converters.
Key features of the IRFR5505 include a low on-resistance (R_DS(on)), which minimizes power loss during operation, and a high threshold voltage, ensuring robustness against unintentional switching. It typically operates at voltages up to 55V and can manage continuous currents of approximately 31A, depending on the specific configuration and cooling conditions.
The IRFR5505 is often packaged in a TO-252 (DPAK) form, facilitating surface mounting on printed circuit boards (PCBs). This packaging supports efficient heat dissipation, which is essential for maintaining performance and reliability in various electronic applications. Overall, the IRFR5505 is a versatile and reliable choice for engineers designing circuits requiring efficient power management.
Key features of the IRFR5505 include a low on-resistance (R_DS(on)), which minimizes power loss during operation, and a high threshold voltage, ensuring robustness against unintentional switching. It typically operates at voltages up to 55V and can manage continuous currents of approximately 31A, depending on the specific configuration and cooling conditions.
The IRFR5505 is often packaged in a TO-252 (DPAK) form, facilitating surface mounting on printed circuit boards (PCBs). This packaging supports efficient heat dissipation, which is essential for maintaining performance and reliability in various electronic applications. Overall, the IRFR5505 is a versatile and reliable choice for engineers designing circuits requiring efficient power management.
Equivalent
The IRFR5505 is a P-channel MOSFET. Equivalent products include the FQP27P06, the NTE2372, and the STP27P06. These components have similar electrical characteristics and can often be used interchangeably in circuits. However, it is crucial to verify the specifications and pin configurations from the datasheets to ensure compatibility with your specific application.
Features
The IRFR5505 is an N-channel MOSFET known for its efficiency and reliability in various electronic applications. Here are its key features:
1. Voltage and Current Ratings: It operates with a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of approximately 31A.
2. RDS(on): The on-state resistance is a low 0.05 ohms, which helps minimize power loss and improve efficiency.
3. Power Dissipation: It supports a maximum power dissipation of around 70W, allowing it to handle significant power loads.
4. Threshold Voltage: The gate threshold voltage (V_GS) is typically around 2 to 4 volts, making it compatible with low-voltage drive circuits.
5. Package: Often housed in a TO-252 (DPAK) package, which is compact and facilitates surface mounting.
6. Temperature Range: It operates effectively in a wide temperature range, suitable for various environments.
7. Applications: Commonly used in power management, motor control, and DC-DC converters due to its robust performance.
These features make the IRFR5505 a versatile component for efficient power handling in electronic circuits.
1. Voltage and Current Ratings: It operates with a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of approximately 31A.
2. RDS(on): The on-state resistance is a low 0.05 ohms, which helps minimize power loss and improve efficiency.
3. Power Dissipation: It supports a maximum power dissipation of around 70W, allowing it to handle significant power loads.
4. Threshold Voltage: The gate threshold voltage (V_GS) is typically around 2 to 4 volts, making it compatible with low-voltage drive circuits.
5. Package: Often housed in a TO-252 (DPAK) package, which is compact and facilitates surface mounting.
6. Temperature Range: It operates effectively in a wide temperature range, suitable for various environments.
7. Applications: Commonly used in power management, motor control, and DC-DC converters due to its robust performance.
These features make the IRFR5505 a versatile component for efficient power handling in electronic circuits.
Pinout
The IRFR5505 is a P-channel MOSFET. It typically comes in a TO-252 (DPAK) package, which has 3 pins. Here is the pin configuration and function:
1. Gate (G): This pin is used to control the MOSFET. Applying voltage to the gate allows current to flow between the source and drain.
2. Drain (D): This is one of the main current-carrying terminals. The current flows from the source to the drain when the MOSFET is turned on.
3. Source (S): The other main current-carrying terminal, typically connected to the negative side of the load in a P-channel MOSFET.
Additionally, the MOSFET's metal tab/fourth lead is often connected internally to the drain and is used for heat dissipation. The IRFR5505 is used for switching applications and high-speed switching due to its low on-resistance and high current handling capability.
1. Gate (G): This pin is used to control the MOSFET. Applying voltage to the gate allows current to flow between the source and drain.
2. Drain (D): This is one of the main current-carrying terminals. The current flows from the source to the drain when the MOSFET is turned on.
3. Source (S): The other main current-carrying terminal, typically connected to the negative side of the load in a P-channel MOSFET.
Additionally, the MOSFET's metal tab/fourth lead is often connected internally to the drain and is used for heat dissipation. The IRFR5505 is used for switching applications and high-speed switching due to its low on-resistance and high current handling capability.
Manufacturer
The IRFR5505 is manufactured by Infineon Technologies. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It was originally part of Siemens before being spun off in 1999. The company focuses on semiconductor solutions and is known for its innovation in the automotive, industrial power control, power management, and digital security markets. Infineon's products are used in a wide range of applications, including automotive electronics, industrial automation, communications, consumer electronics, and security technologies. The company is recognized for its expertise in power semiconductors, microcontrollers, sensors, and security ICs.
Application
The IRFR5505 is a power MOSFET commonly used in various applications due to its efficiency and reliability. Key application areas include:
1. Power Supply Units: Used in DC-DC converters and power management circuits for efficient voltage regulation.
2. Automotive Electronics: Employed in motor control systems and battery management due to its robustness and thermal efficiency.
3. Industrial Automation: Utilized in motor drives and control systems for machinery.
4. Consumer Electronics: Found in home appliances for efficient power handling.
5. Renewable Energy Systems: Used in solar inverters and other renewable energy applications for switching and amplification purposes.
Its characteristics make it suitable for applications requiring high-speed switching and low on-state resistance.
1. Power Supply Units: Used in DC-DC converters and power management circuits for efficient voltage regulation.
2. Automotive Electronics: Employed in motor control systems and battery management due to its robustness and thermal efficiency.
3. Industrial Automation: Utilized in motor drives and control systems for machinery.
4. Consumer Electronics: Found in home appliances for efficient power handling.
5. Renewable Energy Systems: Used in solar inverters and other renewable energy applications for switching and amplification purposes.
Its characteristics make it suitable for applications requiring high-speed switching and low on-state resistance.
Package
The IRFR5505 is typically available in a TO-252 package (also known as DPAK). This package type is commonly used for surface-mounted power semiconductor devices.
