IRL7472L1TRPBF

Imagens apenas para referência

IRL7472L1TRPBF

+Lista de Materiais

MOSFET N-CH 40V 375A DIRECTFET

365 Garantia de Qualidade em 1 dia

7*24 Garantia de serviço em 24 horas

90-Garantia de pós-venda em 1 dia

Garantia de Produto Genuíno

Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series StrongIRFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain(Id) @ 25°C 375A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 0.59mOhm @ 195A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 330 nC @ 4.5 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 20082 pF @ 25 V
Power Dissipation (Max) 3.8W (Ta), 341W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DirectFET™ Isometric L8

Visão Geral

Description

The IRL7472L1TRPBF is a N-channel MOSFET from Infineon Technologies, designed for high-efficiency power management applications. Key features include:
- Low On-Resistance (RDS(on)): 4.2 mΩ (max) at VGS = 10V, reducing conduction losses.
- High Current Handling: Up to 195A continuous drain current (ID).
- Fast Switching: Optimized for DC-DC converters, motor drives, and load switches.
- Low Gate Charge (Qg): Enhances efficiency in high-frequency applications.
- Package: D2PAK (TO-263), suitable for surface-mount designs.
Ideal for automotive, industrial, and power supply systems, this MOSFET offers high reliability and thermal performance.

Equivalent

Equivalent products to the IRL7472L1TRPBF (30V Dual N-Channel MOSFET) include:
- IRL7472L1TRPBF (same part)
- IRL7472L1 (base part number)
- IRL7472 (similar series)
- SiA437DJ-T1-GE3 (Vishay alternative)
- DMN3010LSD-13 (Diodes Inc.)
Check datasheets for exact specs.

Features

The IRL7472L1TRPBF is a N-channel HEXFET Power MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 59A (continuous)
- Low On-Resistance (RDS(on)): 4.5mΩ (max) @ VGS = 10V
- Fast Switching: Optimized for high-efficiency power applications
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS)
- Low Gate Charge (Qg): 38nC (typical)
- Avalanche Energy Rated: Robust against inductive spikes
- Package: D2PAK (TO-263) for high-power dissipation
Ideal for DC-DC converters, motor control, and power management in automotive, industrial, and consumer electronics.

Manufacturer

The IRL7472L1TRPBF is manufactured by Infineon Technologies, a leading German semiconductor company. Infineon specializes in power management, automotive electronics, and IoT solutions. Known for high-performance MOSFETs, the IRL7472L1TRPBF is one of their power MOSFET products, designed for efficient switching applications. Infineon serves industries like automotive, industrial, and consumer electronics.

Application

The IRL7472L1TRPBF is a power MOSFET commonly used in:
- DC-DC Converters: Efficient power conversion in voltage regulators.
- Motor Control: Drives small motors in automotive and industrial systems.
- Power Management: Load switching in portable devices and battery-powered applications.
- LED Drivers: Controls current in lighting systems.
Its low on-resistance and high efficiency make it suitable for compact, energy-sensitive designs.

Produtos relacionados a IRL7472L1TRPBF

  • Orçamento Rápido

  • Envie sua solicitação de orçamento para IRL7472L1TRPBF Use este formulário. Responderemos em até 12 horas.