IRLB3036PBF

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IRLB3036PBF

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MOSFET N-CH 60V 195A TO220AB

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Especificações

Atributo Valor
Package / Case Tube
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 195A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 2.4mOhm @ 165A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 140 nC @ 4.5 V
Vgs(Max) ±16V
Input Capacitance(Ciss)(Max) @ Vds 11210 pF @ 50 V
Power Dissipation (Max) 380W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

Visão Geral

Description

The IRLB3036PBF is a N-channel HEXFET Power MOSFET from Infineon Technologies, designed for high-efficiency switching applications.
### Key Features:
- Voltage Rating: 55V
- Current Rating: 195A (pulsed) / 94A (continuous)
- Low On-Resistance (RDS(on)): 1.7mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-speed performance
- Avalanche Energy Rated: Robust against voltage spikes
- TO-220 Package: Easy to mount and heatsink
### Applications:
- DC-DC Converters
- Motor Control
- Power Supplies
- Battery Management Systems
### Advantages:
- High current handling with minimal power loss
- Efficient thermal performance
- Suitable for demanding power electronics
A reliable choice for high-power, high-frequency switching circuits.

Equivalent

Equivalent products to the IRLB3036PBF (N-channel MOSFET, 40V, 195A, 1.7mΩ) include:
- IRLB3034PBF (Similar specs, slightly higher Rds(on))
- IRFB3607PBF (Higher voltage, 75V, 180A)
- AUIRF1324S-7P (40V, 192A, 1.8mΩ)
- STP160N4F6 (40V, 160A, 2.5mΩ)
- IPB160N04S4-03 (40V, 160A, 1.6mΩ)
Check datasheets for exact compatibility.

Pinout

The IRLB3036PBF is a TO-220AB packaged N-channel MOSFET with 3 pins:
1. Gate (G) – Controls the switching operation (typically driven by 4V–10V).
2. Drain (D) – Connects to the load (handles up to 40V, 195A continuous current).
3. Source (S) – Ground/reference terminal.
Key Features:
- Low on-resistance (RDS(on)): 1.7mΩ @ 10V.
- High current handling: Suitable for power switching applications (e.g., motor drivers, DC-DC converters).
The pinout (left to right, facing the label side) is Gate, Drain, Source.

Manufacturer

The IRLB3036PBF is manufactured by Infineon Technologies, a German semiconductor company. Infineon specializes in power management, automotive electronics, and industrial applications. The IRLB3036PBF is a N-channel MOSFET designed for high-power switching, commonly used in power supplies, motor control, and other high-current applications.
Infineon, formerly part of Siemens, is a global leader in semiconductor solutions, known for innovations in energy efficiency, connectivity, and security.

Application

The IRLB3036PBF, a power MOSFET, is commonly used in:
1. Switching Power Supplies – Efficient voltage conversion in DC-DC and AC-DC circuits.
2. Motor Control – Drives motors in robotics, automotive, and industrial systems.
3. LED Drivers – Regulates current in high-power LED lighting.
4. Battery Management – Controls charging/discharging in portable devices and EVs.
5. Inverters – Converts DC to AC in solar and UPS systems.
Its low on-resistance (RDS(on)) and high current handling (195A) make it ideal for high-efficiency, high-power applications.

Package

The IRLB3036PBF is a Power MOSFET available in a TO-263AB (D2PAK) surface-mount package. This package is designed for high-power applications, offering efficient thermal performance with a metal tab for heat dissipation. It is commonly used in switching circuits, power supplies, and motor control. The TO-263AB package is robust and suitable for automated assembly processes.

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