IRLHM620TRPBF

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IRLHM620TRPBF

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MOSFET N-CH 20V 26A/40A PQFN

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain(Id) @ 25°C 26A (Ta), 40A (Tc)
Drive Voltage(Max Rds On Min Rds On) 2.5V, 10V
Rds On(Max) @ Id Vgs 2.5mOhm @ 20A, 4.5V
Vgs(th)(Max) @ Id 1.1V @ 50µA
Gate Charge(Qg)(Max) @ Vgs 78 nC @ 4.5 V
Vgs(Max) ±12V
Input Capacitance(Ciss)(Max) @ Vds 3620 pF @ 10 V
Power Dissipation (Max) 2.7W (Ta), 37W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PQFN (3x3)

Visão Geral

Description

The IRLHM620TRPBF is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Infineon Technologies. It is designed for use in power electronics applications, offering efficient switching capabilities and handling high voltage and current levels. This module combines the advantages of both MOSFETs and bipolar transistors, providing high input impedance and fast switching speeds with low on-state voltage drop. It is often used in applications like motor drives, inverters, and power supplies.
Key features of the IRLHM620TRPBF include:
1. Voltage Rating: The module can handle substantial voltage, making it suitable for high-power applications.
2. Current Capacity: It can support significant current levels, essential for heavy-duty applications.
3. Thermal Performance: The module is designed to efficiently dissipate heat, ensuring stable operation under demanding conditions.
4. Robust Design: It is built to withstand electrical and thermal stress, increasing its reliability and lifespan.
Overall, the IRLHM620TRPBF is a versatile component in industrial and consumer electronics, valued for its efficiency and reliability in managing high-power demands.

Equivalent

The IRLHM620TRPBF is a power MOSFET, and its equivalents can include similar N-channel MOSFETs with comparable voltage, current, and Rds(on) specifications. Possible equivalents are the NXP PSMN017-30PL, Vishay Si7892DP, and Infineon IPT015N10N5. Always confirm the specifications and pin configuration when substituting components to ensure compatibility with your application.

Features

The IRLHM620TRPBF is an N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of up to 200V and a continuous drain current (I_D) around 11A, making it suitable for high-voltage applications.
2. Low On-Resistance: The device offers low on-resistance (R_DS(on)) to minimize power loss and improve efficiency in switching applications.
3. Fast Switching Speed: Designed for rapid switching capabilities, which is crucial for high-frequency applications.
4. Thermal Performance: It is built to handle significant power dissipation with enhanced thermal performance, aided by its package design.
5. Package Type: Often supplied in a TO-220 or similar package, providing robust mechanical stability and easy installation.
6. RoHS Compliant: The component is environmentally friendly, complying with the Restriction of Hazardous Substances directive.
These features make the IRLHM620TRPBF a versatile choice for applications in power supplies, motor drives, and other electronic devices requiring efficient power management.

Pinout

The IRLHM620TRPBF is a Power MOSFET designed for various applications requiring efficient power management. It typically has a standard TO-252 (DPAK) package, which features three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to turn the MOSFET on or off by applying the appropriate voltage level. It controls the flow of current between the drain and source.
2. Drain (D): This pin is the output terminal where the load is connected. It is responsible for conducting the main current when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It acts as the return path for the current flowing through the drain.
These pins are crucial for the operation of the MOSFET, enabling it to function as an electronic switch or amplifier in various power electronic applications. Always refer to the datasheet for detailed specifications and application guidelines.

Manufacturer

The IRLHM620TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that designs and produces a wide range of semiconductor solutions. The company specializes in products for automotive, industrial, and consumer electronics, among other sectors. They are known for their expertise in power semiconductors, microcontrollers, and sensors, catering to various industries and applications.

Application

The IRLHM620TRPBF is a power MOSFET commonly used in applications requiring efficient power management and control. Key application areas include:
1. DC-DC Converters: Utilized for voltage regulation in power supply units.
2. Motor Drives: Employed in controlling the speed and direction of motors.
3. Battery Management Systems: Critical for efficient charging and discharging processes.
4. Power Inverters: Converts DC to AC for use in renewable energy systems.
5. Automotive Systems: Used in electronic control units for various vehicle functions.
6. Telecommunications: Supports efficient power distribution in network equipment.
Its high efficiency and reliability make it suitable for both consumer electronics and industrial applications.

Package

The IRLHM620TRPBF is a MOSFET transistor packaged in a PQFN (Power Quad Flat No-Lead) package, specifically designed for high-performance applications. This packaging allows for efficient heat dissipation and is ideal for compact and thermally constrained environments.

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