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IRLHM630TRPBF
+Lista de MateriaisMOSFET N-CH 30V 21A/40A PQFN
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRLHM630TRPBF
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Ficha Técnica IRLHM630TRPBF DataSheet
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Pacote PQFN-8
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 21A (Ta), 40A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 10V |
| Rds On(Max) @ Id Vgs | 3.5mOhm @ 20A, 4.5V |
| Vgs(th)(Max) @ Id | 1.1V @ 50µA |
| Gate Charge(Qg)(Max) @ Vgs | 62 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 3170 pF @ 25 V |
| Power Dissipation (Max) | 2.7W (Ta), 37W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PQFN (3x3) |
Visão Geral
Description
- Low On-Resistance (RDS(on)): Typically 1.8 mΩ at 10V VGS, reducing conduction losses.
- High Current Handling: Up to 195A continuous drain current (ID).
- Fast Switching: Optimized for high-frequency applications like DC-DC converters, motor drives, and load switches.
- Logic-Level Gate Drive: Fully enhanced at 4.5V, making it compatible with low-voltage controllers.
- Robust Packaging: TO-252 (DPAK) for efficient thermal performance.
Ideal for battery protection, power supplies, and automotive systems, this MOSFET combines efficiency, thermal stability, and compact design. Always refer to the datasheet for detailed specifications.
Equivalent
- IRLHM630 (same series, different packaging)
- IRLML6303TRPBF (similar specs, SOT-23 package)
- SI2302DS-T1-GE3 (Vishay alternative)
- DMG2305UX-7 (Diodes Inc. alternative)
Check datasheets for exact compatibility in your application.
Features
- Voltage Rating: 30V
- Current Rating: 62A (continuous)
- Low On-Resistance (RDS(on)): 4.5mΩ (max @ VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS)
- Avalanche Rated: Robust against transient voltage spikes
- Package: TO-252 (DPAK), surface-mountable
- Low Gate Charge (Qg): Enhances switching efficiency
- Applications: DC-DC converters, motor control, power management
This MOSFET is designed for high-current, low-voltage applications with minimal power loss.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key features:
- N-channel MOSFET
- 30V drain-source voltage (VDS)
- 62A continuous drain current (ID)
- Ultra-low on-resistance (RDS(on)) for high efficiency
- Logic-level gate drive (compatible with 5V/3.3V controllers)
Common applications:
- DC-DC converters
- Motor control
- Power management in automotive/industrial systems
Package: D2PAK (TO-263-3) for high-power dissipation.
