Imagens apenas para referência
IRLMS6802TRPBF
+Lista de MateriaisMOSFET P-CH 20V 5.6A MICRO6
-
FabricanteTecnologias Infineon
-
Peça do Fabricante #IRLMS6802TRPBF
-
Ficha Técnica IRLMS6802TRPBF DataSheet
-
Pacote SOT-23-6
-
Em Estoque1983
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 5.6A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 50mOhm @ 5.1A, 4.5V |
| Vgs(th)(Max) @ Id | 1.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 16 nC @ 5 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 1079 pF @ 10 V |
| Power Dissipation (Max) | 2W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Micro6™(TSOP-6) |
Visão Geral
Description
Equivalent
1. BS170 - A popular N-channel MOSFET used in low-power applications.
2. 2N7002 - A widely used surface-mount N-channel MOSFET.
3. FDV303N - A small-signal N-channel MOSFET suitable for similar applications.
4. Si2302DS - Another equivalent N-channel MOSFET for low-voltage and low-current applications.
Always check the datasheets for exact specifications and compatibility.
Features
1. Type: N-channel MOSFET, which allows for efficient switching and amplification in circuits.
2. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of up to 11A, making it suitable for low to medium power applications.
3. Low On-Resistance: The device has a low R_DS(on), which minimizes power loss and enhances efficiency, particularly in high-current applications.
4. Package: The MOSFET is housed in a compact, surface-mount SO-8 package, facilitating efficient thermal management and integration into PCB designs.
5. Fast Switching Speed: This feature is critical for applications that require high-frequency operation, improving overall system performance.
6. Temperature Range: It supports a wide operating temperature range, ensuring reliability under varying thermal conditions.
These features make the IRLMS6802TRPBF suitable for consumer electronics, automotive, and industrial power management applications.
Pinout
1. Gate (G): The gate terminal is used to control the MOSFET's switching operation. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Drain (D): This is the terminal where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): The source terminal is connected to ground or the return path of the circuit. It serves as the reference point for the drain current.
This MOSFET is designed for use in power management applications, including load switching and DC-DC conversion, due to its low on-resistance and fast switching capability.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and power supply circuits to enhance efficiency.
2. Automotive Systems: Employed in electronic control units for driving motors and managing power distribution.
3. Consumer Electronics: Integrated into devices for battery management, load switching, and energy conservation.
4. Industrial Equipment: Utilized in motor drives, robotics, and automation systems for efficient power control.
5. Renewable Energy: Applied in solar inverters and other energy harvesting systems for optimal power management.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities.