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IXFB44N100P
+Lista de MateriaisMOSFET N-CH 1000V 44A PLUS264
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FabricanteIXYS
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Peça do Fabricante #IXFB44N100P
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Especificações
| Atributo | Valor |
| Package / Case | Tube |
| Series | HiPerFET™, Polar |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain(Id) @ 25°C | 44A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 220mOhm @ 22A, 10V |
| Vgs(th)(Max) @ Id | 6.5V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 305 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 19000 pF @ 25 V |
| Power Dissipation (Max) | 1250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PLUS264™ |
Visão Geral
Description
The IXFB44N100P is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by IXYS Corporation, which is known for manufacturing power semiconductors. This specific model is characterized by its N-channel enhancement-mode configuration and is typically used in applications requiring efficient power management and switching, such as inverters, motor drives, and power supply circuits.
Key features of the IXFB44N100P include a high voltage rating, with a drain-source voltage (V_ds) of 1000V, and a continuous drain current (I_d) capability of 44A. The device is engineered to handle substantial power levels while maintaining low on-state resistance, which minimizes energy losses during operation. Its robust construction allows for high-speed switching, contributing to enhanced efficiency in various electronic systems.
The IXFB44N100P is housed in a TO-247 package, which provides effective heat dissipation and ensures reliable thermal performance. Overall, this MOSFET is suitable for demanding applications where high efficiency and durability are critical.
Key features of the IXFB44N100P include a high voltage rating, with a drain-source voltage (V_ds) of 1000V, and a continuous drain current (I_d) capability of 44A. The device is engineered to handle substantial power levels while maintaining low on-state resistance, which minimizes energy losses during operation. Its robust construction allows for high-speed switching, contributing to enhanced efficiency in various electronic systems.
The IXFB44N100P is housed in a TO-247 package, which provides effective heat dissipation and ensures reliable thermal performance. Overall, this MOSFET is suitable for demanding applications where high efficiency and durability are critical.
Equivalent
The IXFB44N100P is a power MOSFET. Equivalent products would typically have similar voltage, current ratings, and packaging. Some equivalents may include:
1. STMicroelectronics - STP44NF10
2. ON Semiconductor - FDPF33N25
3. Infineon - IPP44N10S3L-03
Ensure to verify the specifications like RDS(on), Vds, Id, and package type to confirm compatibility. Always consult the datasheets for detailed comparisons.
1. STMicroelectronics - STP44NF10
2. ON Semiconductor - FDPF33N25
3. Infineon - IPP44N10S3L-03
Ensure to verify the specifications like RDS(on), Vds, Id, and package type to confirm compatibility. Always consult the datasheets for detailed comparisons.
Features
The IXFB44N100P is a high-voltage, N-channel power MOSFET known for its robust performance in demanding applications. Key features include:
1. Voltage and Current Ratings: It has a drain-source breakdown voltage (V_ds) of 1000V and a continuous drain current (I_d) rating of 44A, making it suitable for high-power applications.
2. R_ds(on) Value: It offers a low on-resistance, which helps in minimizing power losses and enhancing efficiency, particularly in switching applications.
3. Fast Switching: The MOSFET is designed for fast switching speeds, contributing to improved performance in high-frequency applications.
4. Thermal Performance: It provides efficient thermal management, often featuring a metal oxide semiconductor construction that aids in heat dissipation.
5. Applications: Typical uses include power supplies, motor drives, inverters, and other industrial applications requiring high reliability and efficiency.
6. Package Type: It is commonly available in a TO-247 package, providing mechanical stability and ease of mounting.
These features make the IXFB44N100P a preferred choice for engineers dealing with high-voltage and high-current requirements.
1. Voltage and Current Ratings: It has a drain-source breakdown voltage (V_ds) of 1000V and a continuous drain current (I_d) rating of 44A, making it suitable for high-power applications.
2. R_ds(on) Value: It offers a low on-resistance, which helps in minimizing power losses and enhancing efficiency, particularly in switching applications.
3. Fast Switching: The MOSFET is designed for fast switching speeds, contributing to improved performance in high-frequency applications.
4. Thermal Performance: It provides efficient thermal management, often featuring a metal oxide semiconductor construction that aids in heat dissipation.
5. Applications: Typical uses include power supplies, motor drives, inverters, and other industrial applications requiring high reliability and efficiency.
6. Package Type: It is commonly available in a TO-247 package, providing mechanical stability and ease of mounting.
These features make the IXFB44N100P a preferred choice for engineers dealing with high-voltage and high-current requirements.
Pinout
The IXFB44N100P is a power MOSFET manufactured by IXYS Corporation. It typically comes in a TO-264 package. The key specifications of this MOSFET are a voltage rating of 1000V and a current handling capability of 44A.
In terms of pin count and function:
1. Pin 1 (Gate - G): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the MOSFET is in the on or off state.
2. Pin 2 (Drain - D): This pin is connected to the load. It is the terminal through which the main current flows when the MOSFET is in the on state.
3. Pin 3 (Source - S): Typically connected to ground or the negative side of the power supply, this terminal is the return path for the current flowing through the drain.
The TO-264 package is designed for high power applications, providing efficient thermal management and allowing the MOSFET to handle significant power levels.
In terms of pin count and function:
1. Pin 1 (Gate - G): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the MOSFET is in the on or off state.
2. Pin 2 (Drain - D): This pin is connected to the load. It is the terminal through which the main current flows when the MOSFET is in the on state.
3. Pin 3 (Source - S): Typically connected to ground or the negative side of the power supply, this terminal is the return path for the current flowing through the drain.
The TO-264 package is designed for high power applications, providing efficient thermal management and allowing the MOSFET to handle significant power levels.
Manufacturer
The IXFB44N100P is manufactured by IXYS Corporation. IXYS is a company that specializes in the development and production of power semiconductors and integrated circuits. Founded in 1983 and headquartered in Milpitas, California, IXYS focuses on high-efficiency power management solutions, serving a variety of industries such as telecommunications, industrial, medical, and consumer electronics. The company's product portfolio includes power MOSFETs, IGBTs, diodes, and other power-related semiconductor devices. IXYS is recognized for its innovations in power electronics and its commitment to energy-efficient technologies.
Application
The IXFB44N100P is a power MOSFET designed for high-efficiency applications. Its primary application areas include:
1. Switch Mode Power Supplies (SMPS): Used in converters and inverters for efficient power conversion.
2. Motor Drives: Suitable for controlling and driving motors in industrial and automotive applications.
3. Uninterruptible Power Supplies (UPS): Ensures efficient power management and delivery.
4. Power Factor Correction (PFC) Circuits: Enhances power efficiency in electronic devices.
5. Renewable Energy Systems: Used in solar inverters and wind energy converters for efficient energy management.
6. Automotive Applications: Supports various functions in electric and hybrid vehicles.
Its high voltage and current ratings make it ideal for demanding power applications.
1. Switch Mode Power Supplies (SMPS): Used in converters and inverters for efficient power conversion.
2. Motor Drives: Suitable for controlling and driving motors in industrial and automotive applications.
3. Uninterruptible Power Supplies (UPS): Ensures efficient power management and delivery.
4. Power Factor Correction (PFC) Circuits: Enhances power efficiency in electronic devices.
5. Renewable Energy Systems: Used in solar inverters and wind energy converters for efficient energy management.
6. Automotive Applications: Supports various functions in electric and hybrid vehicles.
Its high voltage and current ratings make it ideal for demanding power applications.
Package
The IXFB44N100P is a power MOSFET, and it comes in a TO-247 package type. This package is commonly used for high-power applications due to its ability to handle higher currents and power dissipation.
