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IXFK26N100P
+Lista de MateriaisMOSFET N-CH 1000V 26A TO264AA
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FabricanteIXYS
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Peça do Fabricante #IXFK26N100P
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Pacote TO-264
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Especificações
| Atributo | Valor |
| Package / Case | Tube |
| Series | HiPerFET™, Polar |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain(Id) @ 25°C | 26A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 390mOhm @ 13A, 10V |
| Vgs(th)(Max) @ Id | 6.5V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 197 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 11900 pF @ 25 V |
| Power Dissipation (Max) | 780W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-264AA (IXFK) |
Visão Geral
Description
The IXFK26N100P is a power MOSFET produced by IXYS Corporation, designed for high-efficiency energy conversion in various applications. It features a maximum drain-source voltage (V_DS) of 1000V and a continuous drain current (I_D) of 26A, making it suitable for high-power applications. The device utilizes advanced MOSFET technology to offer low on-state resistance, reducing conduction losses and improving efficiency.
Key features include fast switching speeds, which help minimize energy losses in power conversion systems, and a robust design that enhances reliability under high-stress conditions. The IXFK26N100P is commonly used in applications such as switch-mode power supplies (SMPS), motor drives, and other circuits requiring efficient load switching.
Its TO-264 package allows for efficient heat dissipation, essential for maintaining performance under heavy loads. The component is known for its durability, high thermal stability, and capability to handle large voltage and current, which are critical for ensuring long-term performance in demanding environments.
Key features include fast switching speeds, which help minimize energy losses in power conversion systems, and a robust design that enhances reliability under high-stress conditions. The IXFK26N100P is commonly used in applications such as switch-mode power supplies (SMPS), motor drives, and other circuits requiring efficient load switching.
Its TO-264 package allows for efficient heat dissipation, essential for maintaining performance under heavy loads. The component is known for its durability, high thermal stability, and capability to handle large voltage and current, which are critical for ensuring long-term performance in demanding environments.
Equivalent
The IXFK26N100P is a 1000V, 26A N-channel MOSFET. Equivalent products are typically those with similar voltage, current, and package specifications. Some equivalents include:
1. STMicroelectronics STW26NM50N (500V, 23A)
2. Infineon IPW60R041P6 (650V, 41A)
3. Vishay IRFP460 (500V, 20A)
4. ON Semiconductor NTP26N10 (100V, 26A)
Always confirm specific parameters and pin configurations with the datasheets to ensure compatibility.
1. STMicroelectronics STW26NM50N (500V, 23A)
2. Infineon IPW60R041P6 (650V, 41A)
3. Vishay IRFP460 (500V, 20A)
4. ON Semiconductor NTP26N10 (100V, 26A)
Always confirm specific parameters and pin configurations with the datasheets to ensure compatibility.
Features
The IXFK26N100P is a N-channel enhancement mode power MOSFET. Here are some key features:
1. Voltage and Current Ratings: It has a drain-source voltage (Vds) of 1000V, and a continuous drain current (Id) of 26A, making it suitable for high-voltage applications.
2. RDS(on): The device features a low on-resistance, optimizing efficiency by minimizing power loss during operation.
3. High-Speed Switching: Designed for fast switching speeds, which enhances performance in high-frequency applications.
4. Thermal Performance: It provides good thermal performance with an efficient design to manage heat dissipation, which is crucial for maintaining reliability under high-power conditions.
5. Package Type: Available in a TO-3P package, allowing for easy mounting and connection in circuits.
6. Applications: Commonly used in power supplies, motor drivers, and other applications requiring efficient management of high-voltage and high-current levels.
These features make the IXFK26N100P a robust choice for demanding power electronics applications.
1. Voltage and Current Ratings: It has a drain-source voltage (Vds) of 1000V, and a continuous drain current (Id) of 26A, making it suitable for high-voltage applications.
2. RDS(on): The device features a low on-resistance, optimizing efficiency by minimizing power loss during operation.
3. High-Speed Switching: Designed for fast switching speeds, which enhances performance in high-frequency applications.
4. Thermal Performance: It provides good thermal performance with an efficient design to manage heat dissipation, which is crucial for maintaining reliability under high-power conditions.
5. Package Type: Available in a TO-3P package, allowing for easy mounting and connection in circuits.
6. Applications: Commonly used in power supplies, motor drivers, and other applications requiring efficient management of high-voltage and high-current levels.
These features make the IXFK26N100P a robust choice for demanding power electronics applications.
Pinout
The IXFK26N100P is a power MOSFET designed for high-voltage, high-speed switching applications. It is typically housed in a TO-247 package. The device usually has a three-pin configuration, which is standard for most power MOSFETs:
1. Gate (G): The terminal that receives the input signal to control the MOSFET's switching operation.
2. Drain (D): The terminal where the main current flows out of the device when it is in the 'on' state.
3. Source (S): The terminal where the main current enters the device.
The primary function of the IXFK26N100P is to act as an electronic switch or amplifier within circuits, capable of handling high voltages and currents efficiently. With a drain-source voltage rating of 1000V and a continuous drain current rating of approximately 26A, this MOSFET is suitable for applications like power supplies, motor drives, and other high-power systems.
1. Gate (G): The terminal that receives the input signal to control the MOSFET's switching operation.
2. Drain (D): The terminal where the main current flows out of the device when it is in the 'on' state.
3. Source (S): The terminal where the main current enters the device.
The primary function of the IXFK26N100P is to act as an electronic switch or amplifier within circuits, capable of handling high voltages and currents efficiently. With a drain-source voltage rating of 1000V and a continuous drain current rating of approximately 26A, this MOSFET is suitable for applications like power supplies, motor drives, and other high-power systems.
Manufacturer
The IXFK26N100P is manufactured by IXYS Corporation. IXYS is a company that specializes in the development and production of power semiconductors and integrated circuits. Founded in 1983, IXYS focuses on providing high-efficiency power management solutions for a variety of applications, including industrial, telecommunications, consumer electronics, medical, and automotive industries. The company is known for its innovation in power semiconductor technology, offering products such as power MOSFETs, IGBTs, thyristors, and other related components. IXYS was acquired by Littelfuse, Inc. in 2018, further expanding its reach and product offerings in the power semiconductor market.
Application
The IXFK26N100P is a high-voltage, N-channel MOSFET commonly used in power electronics applications. Its application areas include:
1. Switching Power Supplies: Utilized for efficient power conversion in SMPS.
2. Motor Drives: Suitable for controlling DC motors in industrial systems.
3. Inverters: Used in DC-AC inverters for renewable energy systems.
4. Uninterruptible Power Supplies (UPS): Helps in switching applications to maintain power continuity.
5. LED Drivers: Employed in high-power LED driving circuits.
6. Battery Chargers: Used in fast charging systems for optimal power delivery.
7. HVAC Systems: Implemented for controlling high-voltage components.
Its high voltage and current handling capabilities make it ideal for these high-power applications.
1. Switching Power Supplies: Utilized for efficient power conversion in SMPS.
2. Motor Drives: Suitable for controlling DC motors in industrial systems.
3. Inverters: Used in DC-AC inverters for renewable energy systems.
4. Uninterruptible Power Supplies (UPS): Helps in switching applications to maintain power continuity.
5. LED Drivers: Employed in high-power LED driving circuits.
6. Battery Chargers: Used in fast charging systems for optimal power delivery.
7. HVAC Systems: Implemented for controlling high-voltage components.
Its high voltage and current handling capabilities make it ideal for these high-power applications.
Package
The IXFK26N100P is a N-channel MOSFET and its package type is TO-264.
