IXFN150N10

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IXFN150N10

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MOSFET N-CH 100V 150A SOT-227

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Especificações

Atributo Valor
Supplier IXYS
Package / Case Bulk
Series HiPerFET™
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 150A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 12mOhm @ 75A, 10V
Vgs(th)(Max) @ Id 4V @ 8mA
Gate Charge(Qg)(Max) @ Vgs 360 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 9000 pF @ 25 V
Power Dissipation (Max) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B

Visão Geral

Description

IXFN150N10 is an N-channel enhancement-mode power MOSFET from the IXFN family. It is used as a high‑current switching element in power electronics.
Key points:
- Ratings (per device family): VDS around 100 V, ID up to about 150 A.
- On‑resistance: Rds(on) is typically tens of milliohms at VGS ≈ 10 V.
- Drive and performance: fast switching suitable for DC‑DC converters, motor drives, and inverters; has rugged SOA/avalanche characteristics.
- Gate and thermal: standard gate drive around 10 V; requires proper heatsinking and thermal management.
- Packaging: available in power packages for both surface‑mount and through‑hole variants (depending on specific part).
For exact numbers (Rds(on), Qg, max pulsed current, SOA, thermal resistance, and packaging) refer to the official datasheet for your specific device variant. If you’d like, I can pull and summarize the exact datasheet details.

Features

Here are the typical features of IXFN150N10 (high-level, as per datasheet):
- N-channel IGBT
- 150 A continuous current
- 1000 V blocking voltage
- Fast switching for high-efficiency PWM applications
- Low conduction losses (Vce(sat) is kept modest at rated current)
- Robust dv/dt and di/dt capability
- Good short-circuit and avalanche ruggedness
- Gate drive: standard drive around 15 V (with typical tolerance for 0–18 V range)
- Widely used in power converters: motor drives, inverters, UPS, switch-mode power supplies
Note: exact numbers (packaging, safe operating area, and electrical tolerances) depend on the specific package and lot—consult the datasheet for precise specs.

Pinout

- Pin count: 3 leads (plus the metal tab).
- Function: N-channel MOSFET (enhancement mode). Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source. The drain is connected to the tab/heatsink.

Manufacturer

- Manufacturer: IXYS Corporation (now part of Littelfuse).
- What kind of company: A semiconductor company specializing in power semiconductors (e.g., MOSFETs, IGBTs, thyristors, diodes).

Application

IXFN150N10 is a high-current, fast-switching IGBT (about 150 A, 100 V class). Typical application areas include:
- Three-phase motor drives (BLDC, PMSM, induction) and servo drives
- Switch‑mode power supplies, DC–DC and DC–AC inverters
- Solar/battery inverters and uninterruptible power supplies (UPS)
- Active front ends, rectifiers, and PFC stages
- Welding and induction-heating drive circuits
- Industrial automation and control power converters
Suitable for low‑voltage, high‑current power conversion needs.

Package

TO-220AB through-hole package (TO-220 family).

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