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IXFN170N65X2
+Lista de MateriaisMOSFET N-CH 650V 170A SOT227B
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FabricanteIXYS
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Peça do Fabricante #IXFN170N65X2
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Especificações
| Atributo | Valor |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | HiPerFET™, Ultra X2 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 170A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 13mOhm @ 85A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 8mA |
| Gate Charge(Qg)(Max) @ Vgs | 434 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 27000 pF @ 25 V |
| Power Dissipation (Max) | 1170W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227B |
Visão Geral
Description
IXFN170N65X2 is a high-power, high-voltage N-channel IGBT (power transistor) from the IXFN family. It is designed for switching power electronics.
Key points:
- Ratings: about 170 A continuous current, 650 V blocking voltage.
- Construction: trench-gate, field-stop design with enhanced ruggedness (X2) for better short-circuit tolerance and fast switching.
- Gate drive: typically driven with around 15 V gate voltage (max ±20 V).
- Applications: motor drives, inverters, power supplies (PFC/UPS), solar inverters, and other high-power switching uses.
- Important considerations: use proper gate drive and dv/dt/di/dt control; ensure operation within safe-area and temperature derating to maintain reliability.
Key points:
- Ratings: about 170 A continuous current, 650 V blocking voltage.
- Construction: trench-gate, field-stop design with enhanced ruggedness (X2) for better short-circuit tolerance and fast switching.
- Gate drive: typically driven with around 15 V gate voltage (max ±20 V).
- Applications: motor drives, inverters, power supplies (PFC/UPS), solar inverters, and other high-power switching uses.
- Important considerations: use proper gate drive and dv/dt/di/dt control; ensure operation within safe-area and temperature derating to maintain reliability.
Features
- N-channel enhancement-mode power MOSFET
- 650 V blocking voltage
- 170 A continuous drain current
- Trench MOSFET technology for low on-resistance and fast switching
- High dv/dt tolerance and robust avalanche energy capability
- Suitable for switching power supplies, PFCs, motor drives, and solar inverters
- Moderate gate-drive requirements with low-to-moderate gate charge
- Available in common power packages (e.g., TO-263/D2PAK/TO-220 variants)
- 650 V blocking voltage
- 170 A continuous drain current
- Trench MOSFET technology for low on-resistance and fast switching
- High dv/dt tolerance and robust avalanche energy capability
- Suitable for switching power supplies, PFCs, motor drives, and solar inverters
- Moderate gate-drive requirements with low-to-moderate gate charge
- Available in common power packages (e.g., TO-263/D2PAK/TO-220 variants)
Pinout
3 pins (leads) plus the tab (which is Drain). It’s an N-channel power MOSFET. Pin 1 = Gate (G), Pin 2 = Drain (D) – also connected to the tab, Pin 3 = Source (S).
Manufacturer
- Manufacturer: IXYS Corporation (IXYS Semiconductors), now part of Littelfuse.
- What kind of company: A power‑semiconductor company that designs and manufactures high-power devices (MOSFETs, IGBTs, thyristors, diodes) for automotive, industrial, and power-conversion applications.
- What kind of company: A power‑semiconductor company that designs and manufactures high-power devices (MOSFETs, IGBTs, thyristors, diodes) for automotive, industrial, and power-conversion applications.
Application
IXFN170N65X2 is a high‑power N‑channel MOSFET (about 650 V, ~170 A). Typical application areas include:
- Switch‑mode power supplies and DC‑DC converters
- Power factor correction (PFC) and active front‑end stages
- Motor drives and variable‑speed drives (VFDs)
- Solar and other renewable‑energy inverters
- Uninterruptible power supplies (UPS) and energy‑storage inverter stages
- Industrial power controls and high‑efficiency resonant/switching topologies
- Switch‑mode power supplies and DC‑DC converters
- Power factor correction (PFC) and active front‑end stages
- Motor drives and variable‑speed drives (VFDs)
- Solar and other renewable‑energy inverters
- Uninterruptible power supplies (UPS) and energy‑storage inverter stages
- Industrial power controls and high‑efficiency resonant/switching topologies
Package
D²PAK (TO-263) surface-mount package.
