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IXFP34N65X2
+Lista de MateriaisMOSFET N-CH 650V 34A TO220AB
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FabricanteIXYS
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Peça do Fabricante #IXFP34N65X2
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Especificações
| Atributo | Valor |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | HiPerFET™, Ultra X2 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 34A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 105mOhm @ 17A, 10V |
| Vgs(th)(Max) @ Id | 5.5V @ 2.5mA |
| Gate Charge(Qg)(Max) @ Vgs | 56 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 3330 pF @ 25 V |
| Power Dissipation (Max) | 540W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
Visão Geral
Description
IXFP34N65X2 is a high‑voltage N‑channel power MOSFET in the IXFP family, used for switching power electronics. The device is intended for 650‑V class applications (e.g., offline SMPS, PFC stages, motor drives, DC–DC converters). The “34” and “65” suggest roughly tens of amperes of current capability and about 650 V breakdown, with the “X2” suffix indicating a specific package variant. However, exact electricals (Vds max, Id, Rds(on), Vgs(th), gate charge) depend on the exact lot and package. To design safely, consult the latest datasheet from IXYS (or the distributor) for precise values, including: Vds, Id, Rds(on) at your gate drive, Qgs/Qgd, switching speeds, and thermal resistance (RθJA/RθJC). Also verify pinout and pad layout for the chosen package. In short: it’s a 650‑V N‑MOSFET for high‑power switching; verify the official datasheet for exact specs before use.
Features
IXFP34N65X2 is a high‑voltage N‑channel power MOSFET. Key features:
- Type: enhancement‑mode N‑channel MOSFET
- Vds: ~650 V
- Id: ~34 A continuous current
- Rds(on): specified in the datasheet (low enough for efficient switching; exact value varies by temp/gate drive)
- Gate drive: typically 10 V recommended
- Switching: fast with low gate charge
- Protection: avalanche ruggedness for inductive switching
- Temp range: wide operating temperature (TJ up to ~150°C)
- Packaging: available in standard surface‑mount and through‑hole packages
- Applications: switch-mode power supplies, PFC, motor drives, inverters
Note: consult the latest datasheet for exact Rds(on), Vgs(th), package options, and thermal limits for your application.
- Type: enhancement‑mode N‑channel MOSFET
- Vds: ~650 V
- Id: ~34 A continuous current
- Rds(on): specified in the datasheet (low enough for efficient switching; exact value varies by temp/gate drive)
- Gate drive: typically 10 V recommended
- Switching: fast with low gate charge
- Protection: avalanche ruggedness for inductive switching
- Temp range: wide operating temperature (TJ up to ~150°C)
- Packaging: available in standard surface‑mount and through‑hole packages
- Applications: switch-mode power supplies, PFC, motor drives, inverters
Note: consult the latest datasheet for exact Rds(on), Vgs(th), package options, and thermal limits for your application.
Pinout
Pin count: 6 leads.
Function: Dual N-channel enhancement-mode high-voltage MOSFET pair (650 V, ~34 A per device) in a single package (X2). Each MOSFET has its own gate and source; the two drains are typically tied to the package tab/exposed pad (common drain).
Function: Dual N-channel enhancement-mode high-voltage MOSFET pair (650 V, ~34 A per device) in a single package (X2). Each MOSFET has its own gate and source; the two drains are typically tied to the package tab/exposed pad (common drain).
Manufacturer
- Manufacturer: IXYS Corporation (now part of Littelfuse).
- What kind of company: A semiconductor company specializing in power electronics, designing and manufacturing power MOSFETs, IGBTs, diodes, and other high-voltage devices.
- What kind of company: A semiconductor company specializing in power electronics, designing and manufacturing power MOSFETs, IGBTs, diodes, and other high-voltage devices.
Application
IXFP34N65X2 is a high‑voltage N‑channel MOSFET (about 650 V, ~34 A). Typical applications include:
- Switch‑mode power supplies (SMPS) and PFC stages
- DC‑DC converters
- Solar/PV inverters and renewable‑energy systems
- Motor drives and servo drives
- Uninterruptible power supplies (UPS) and telecom/industrial power supplies
- AC‑DC front ends and high‑voltage switching in power electronics
- Switch‑mode power supplies (SMPS) and PFC stages
- DC‑DC converters
- Solar/PV inverters and renewable‑energy systems
- Motor drives and servo drives
- Uninterruptible power supplies (UPS) and telecom/industrial power supplies
- AC‑DC front ends and high‑voltage switching in power electronics
Package
TO-220AB (through-hole) package.
