IXTA76P10T

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IXTA76P10T

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MOSFET P-CH 100V 76A TO263

  • FabricanteIXYS

  • Peça do Fabricante #IXTA76P10T

  • Pacote TO-263AA

  • Em Estoque2753

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Especificações

Atributo Valor
Package / Case Tube
Series TrenchP™
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 76A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 25mOhm @ 38A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 197 nC @ 10 V
Vgs(Max) ±15V
Input Capacitance(Ciss)(Max) @ Vds 13700 pF @ 25 V
Power Dissipation (Max) 298W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA

Visão Geral

Description

The IXTA76P10T is a high-performance P-channel MOSFET designed for power management applications. Key features include:
- Voltage Rating: -100V
- Current Rating: -76A (continuous)
- Low On-Resistance (RDS(on)): 10mΩ (typical)
- Fast Switching: Optimized for efficiency in DC-DC converters, motor control, and battery protection circuits.
- Robust Package: TO-252 (DPAK) for effective thermal dissipation.
Ideal for automotive, industrial, and consumer electronics, it offers reliable performance in high-power, low-loss applications. Always refer to the datasheet for detailed specifications.

Features

The IXTA76P10T is a high-performance N-channel MOSFET with the following key features:
- Voltage Rating: 100V
- Current Rating: 76A (continuous)
- Low On-Resistance (RDS(on)): 10mΩ (max) at VGS = 10V
- Fast Switching: Optimized for high-speed applications
- Robust Design: Avalanche energy rated for reliability
- Package: TO-220 (through-hole), suitable for power applications
- Low Gate Charge: Enhances efficiency in switching circuits
Ideal for power supplies, motor control, and DC-DC converters.

Pinout

The IXTA76P10T is a 3-pin (TO-220AB package) P-channel MOSFET with the following functions:
1. Pin 1 (Gate): Controls the switching operation.
2. Pin 2 (Drain): Connects to the load (high-side switch).
3. Pin 3 (Source): Connects to the power supply (V+).
Key specs:
- Voltage: -100V (drain-to-source, VDSS)
- Current: -76A (continuous drain current, ID)
- Low RDS(on): 10mΩ (typical)
Used in power switching, motor control, and high-efficiency DC-DC converters.

Application

The IXTA76P10T is a P-channel MOSFET primarily used in:
1. Power Management – Efficient switching in DC-DC converters and voltage regulation.
2. Battery Protection – Safeguarding circuits in portable devices and EVs.
3. Load Switching – Controlling high-current loads in industrial and automotive systems.
4. Motor Control – Driving motors in robotics and automation.
5. Inverters – Power conversion in renewable energy systems.
Its low on-resistance (RDS(on)) and high current handling (76A) make it ideal for high-efficiency, high-power applications.

Package

The IXTA76P10T is a TO-247 package type. This robust, high-power package is commonly used for power transistors and MOSFETs, offering excellent thermal performance and high current handling capabilities. The TO-247 design includes three leads and a large mounting tab for efficient heat dissipation.

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