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IXTH48N65X2
+Lista de MateriaisMOSFET N-CH 650V 48A TO247
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FabricanteIXYS
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Peça do Fabricante #IXTH48N65X2
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Ficha Técnica IXTH48N65X2 DataSheet
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Especificações
| Atributo | Valor |
| Series | Ultra X2 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 24A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 4420 pF @ 25 V |
| Power Dissipation (Max) | 660W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 (IXTH) |
| Package / Case | TO-247-3 |
| Base Product Number | IXTH48 |
Visão Geral
Description
The IXTH48N65X2 is a high-voltage N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_DS) of 650 volts and a continuous drain current (I_D) of 48 amps. This device is characterized by its low on-resistance (R_DS(on)), which minimizes power loss during operation, making it suitable for applications like power supplies, motor drives, and DC-DC converters.
The IXTH48N65X2 offers fast switching speeds and is typically used in high-efficiency circuits. Its thermal performance is enhanced by a robust package design, allowing for effective heat dissipation. This MOSFET also provides significant gate drive flexibility, making it compatible with various control circuits.
Overall, the IXTH48N65X2 is an ideal choice for designers looking to achieve efficient power management in demanding applications. Always consult the datasheet for specific electrical characteristics, thermal management, and application guidelines.
The IXTH48N65X2 offers fast switching speeds and is typically used in high-efficiency circuits. Its thermal performance is enhanced by a robust package design, allowing for effective heat dissipation. This MOSFET also provides significant gate drive flexibility, making it compatible with various control circuits.
Overall, the IXTH48N65X2 is an ideal choice for designers looking to achieve efficient power management in demanding applications. Always consult the datasheet for specific electrical characteristics, thermal management, and application guidelines.
Equivalent
The IXTH48N65X2 is an N-channel MOSFET with a 650V rating and a 48A continuous current. Equivalent products include the Infineon IPP65R048C6, STMicroelectronics STP48N65M5, and Vishay SIHF48N65E. Always verify specific electrical characteristics and ensure compatibility with your application before substitution.
Features
The IXTH48N65X2 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 650V, making it suitable for high-voltage applications.
2. Current Handling: The device can handle a continuous drain current (Id) of 48A, providing robust performance in power-switching circuits.
3. Low On-Resistance: With a low Rds(on) of approximately 0.2 ohms at Vgs = 10V, it ensures minimal power loss during operation.
4. Fast Switching: The IXTH48N65X2 supports high-speed switching, enhancing efficiency in applications such as switch-mode power supplies and inverters.
5. Thermal Management: It features a high thermal resistance rating, allowing for effective heat dissipation and reliability in demanding environments.
6. Package Type: Available in a TO-220 package, facilitating easy mounting and heat sink integration.
Overall, the IXTH48N65X2 is ideal for various applications in the power electronics sector, balancing performance and thermal efficiency.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 650V, making it suitable for high-voltage applications.
2. Current Handling: The device can handle a continuous drain current (Id) of 48A, providing robust performance in power-switching circuits.
3. Low On-Resistance: With a low Rds(on) of approximately 0.2 ohms at Vgs = 10V, it ensures minimal power loss during operation.
4. Fast Switching: The IXTH48N65X2 supports high-speed switching, enhancing efficiency in applications such as switch-mode power supplies and inverters.
5. Thermal Management: It features a high thermal resistance rating, allowing for effective heat dissipation and reliability in demanding environments.
6. Package Type: Available in a TO-220 package, facilitating easy mounting and heat sink integration.
Overall, the IXTH48N65X2 is ideal for various applications in the power electronics sector, balancing performance and thermal efficiency.
Pinout
The IXTH48N65X2 is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET, allowing it to turn on or off based on the voltage applied.
2. Drain (D): This pin connects to the load and is where the current flows out when the device is turned on.
3. Source (S): This pin connects to the ground or negative side of the power supply. The current flows into the source when the MOSFET is active.
The IXTH48N65X2 is designed for high-voltage applications, featuring a maximum drain-source voltage (V_DS) of 650V and a maximum continuous drain current (I_D) of 48A. It is commonly used in power management and switching applications in various electronic circuits.
1. Gate (G): This pin is used to control the MOSFET, allowing it to turn on or off based on the voltage applied.
2. Drain (D): This pin connects to the load and is where the current flows out when the device is turned on.
3. Source (S): This pin connects to the ground or negative side of the power supply. The current flows into the source when the MOSFET is active.
The IXTH48N65X2 is designed for high-voltage applications, featuring a maximum drain-source voltage (V_DS) of 650V and a maximum continuous drain current (I_D) of 48A. It is commonly used in power management and switching applications in various electronic circuits.
Manufacturer
The IXTH48N65X2 is manufactured by IXYS Corporation, a subsidiary of Littelfuse, Inc. IXYS focuses on developing and producing advanced semiconductor products, particularly for power management and conversion applications. The company is known for its expertise in high-power and high-frequency components, including MOSFETs, IGBTs, and diodes.
IXYS serves a diverse range of industries, including telecommunications, industrial automation, automotive, and renewable energy. Their products are utilized in applications such as motor drives, power supplies, and solar inverters. The company emphasizes innovation and quality, striving to meet the evolving needs of its customers in high-performance electronics.
IXYS serves a diverse range of industries, including telecommunications, industrial automation, automotive, and renewable energy. Their products are utilized in applications such as motor drives, power supplies, and solar inverters. The company emphasizes innovation and quality, striving to meet the evolving needs of its customers in high-performance electronics.
Application
The IXTH48N65X2 is a high-voltage N-channel MOSFET designed for applications in power electronics. Its primary application areas include:
1. Switching Power Supplies: Used in DC-DC converters for efficient power management.
2. Motor Drives: Employed in industrial and consumer motor control for efficient operation.
3. Inverters: Utilized in photovoltaic and renewable energy systems for converting DC to AC.
4. UPS Systems: Used in uninterruptible power supplies for reliable power backup.
5. Power Amplifiers: Applied in RF amplifiers for enhanced signal integrity.
Its high voltage and current ratings make it suitable for demanding applications in various electronic systems.
1. Switching Power Supplies: Used in DC-DC converters for efficient power management.
2. Motor Drives: Employed in industrial and consumer motor control for efficient operation.
3. Inverters: Utilized in photovoltaic and renewable energy systems for converting DC to AC.
4. UPS Systems: Used in uninterruptible power supplies for reliable power backup.
5. Power Amplifiers: Applied in RF amplifiers for enhanced signal integrity.
Its high voltage and current ratings make it suitable for demanding applications in various electronic systems.
Package
The IXTH48N65X2 is typically packaged in a TO-247 format, which is a popular package type for high-power devices. This package provides excellent thermal performance and is suitable for applications requiring efficient heat dissipation.
