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MMBF4117
+Lista de MateriaisJFET N-CH 40V SOT23-3
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Fabricanteonsemi
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Peça do Fabricante #MMBF4117
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Especificações
| Atributo | Valor |
| Part Status | Active |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 30 µA @ 10 V |
| Voltage - Cutoff (VGS off) @ Id | 600 mV @ 1 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 3pF @ 10V |
| Power - Max | 225 mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Base Product Number | MMBF41 |
Visão Geral
Description
Students are likely to engage in hands-on projects, utilizing software tools for financial modeling and simulations. Additionally, the course may emphasize the importance of ethical practices in finance, preparing students for responsible decision-making in their future careers. Overall, MMBF4117 serves as a critical stepping stone for those pursuing careers in finance, investment banking, or related fields, fostering both theoretical knowledge and practical skills essential for success in the finance industry.
Equivalent
Features
1. High Performance: It offers low on-resistance, typically around 0.5 ohms, ensuring efficient power management and minimal heat generation.
2. Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
3. Current Handling: It can handle continuous drain currents up to 5A, allowing it to drive moderate loads effectively.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is typically between 1-3V, enabling efficient switching with low drive voltages.
5. Package Type: It comes in a compact, surface-mount SOT-23 package, facilitating space-saving designs.
6. Fast Switching Speed: The MMBF4117 has a rapid switching capability, making it ideal for applications in switching power supplies and signal modulation.
Overall, the MMBF4117 is a versatile component suitable for various low-power and high-frequency applications in consumer electronics.
Pinout
Pin Functions:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): Source terminal for the first MOSFET.
3. Drain 1 (D1): Drain terminal for the first MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): Source terminal for the second MOSFET.
6. Drain 2 (D2): Drain terminal for the second MOSFET.
This configuration allows for efficient switching and amplification in various electronic circuits.
Manufacturer
Application
1. RF Amplifiers: Used in low-noise amplifiers (LNAs) for communication devices.
2. Switching Applications: Employed in RF switches for routing signals in telecommunication systems.
3. Mixers: Utilized in RF mixer circuits for converting frequencies in radio and TV receivers.
4. Signal Processing: Implemented in signal processing circuits for improved performance in wireless communications.
5. Testing Equipment: Used in testing setups for RF signal generation and modulation.
Overall, it is ideal for applications requiring high gain and low noise performance in the RF spectrum.