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SI1922EDH-T1-GE3
+Lista de MateriaisMOSFET 2N-CH 20V 1.3A SC70-6
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FabricanteVishay Siliconix
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Peça do Fabricante #SI1922EDH-T1-GE3
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Em Estoque6581
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Especificações
| Atributo | Valor |
| Series | TrenchFET® |
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A |
| Rds On (Max) @ Id, Vgs | 198mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 8V |
| Power - Max | 1.25W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-70-6 |
| Base Product Number | SI1922 |
Visão Geral
Description
The SI1922EDH-T1-GE3 is a high-performance, dual-channel analog switch designed for various applications in telecommunications, consumer electronics, and data acquisition systems. This device is part of the SI1922 family of analog switches and features low on-resistance and low distortion, enabling efficient signal transfer with minimal signal loss. It operates over a wide voltage range, making it suitable for both low and high-voltage applications.
Key features include a fast switching speed, low power consumption, and a compact package, which makes it ideal for portable devices. The SI1922EDH-T1-GE3 also has built-in ESD protection to enhance reliability in harsh environments. Its dual-channel configuration allows for flexibility in design, enabling designers to manage multiple signals effectively. Overall, this analog switch is a versatile solution for enhancing signal routing in modern electronic devices.
Key features include a fast switching speed, low power consumption, and a compact package, which makes it ideal for portable devices. The SI1922EDH-T1-GE3 also has built-in ESD protection to enhance reliability in harsh environments. Its dual-channel configuration allows for flexibility in design, enabling designers to manage multiple signals effectively. Overall, this analog switch is a versatile solution for enhancing signal routing in modern electronic devices.
Equivalent
The SI1922EDH-T1-GE3 is a dual N-channel MOSFET driver. Equivalent products include the MIC4427, TC4420, and FAN7380. These alternatives offer similar specifications in terms of drive capability and voltage range. Always verify specific parameters like voltage ratings and drive current requirements to ensure compatibility for your application.
Features
The SI1922EDH-T1-GE3 is a high-performance single-chip, low-voltage, N-channel MOSFET driver designed for various applications. Key features include:
1. Input Voltage Range: Operates from 4.5V to 20V, making it versatile for different power supply levels.
2. High Drive Capability: Capable of sourcing and sinking up to 2A, ensuring fast switching operations.
3. Low Output Resistance: Features a low on-resistance for efficient power handling, which minimizes heat generation.
4. Wide Temperature Range: Rated for operation in environments from -40°C to +125°C, suitable for industrial applications.
5. Integrated Bootstrap Circuit: Supports high-side driving, simplifying circuit design.
6. Low Propagation Delay: Ensures rapid switching times for improved efficiency in high-frequency applications.
7. Fault Protection: Includes features for over-temperature protection, enhancing reliability.
The SI1922EDH-T1-GE3 is ideal for use in motor drivers, LED drivers, and power management circuits in various electronic systems.
1. Input Voltage Range: Operates from 4.5V to 20V, making it versatile for different power supply levels.
2. High Drive Capability: Capable of sourcing and sinking up to 2A, ensuring fast switching operations.
3. Low Output Resistance: Features a low on-resistance for efficient power handling, which minimizes heat generation.
4. Wide Temperature Range: Rated for operation in environments from -40°C to +125°C, suitable for industrial applications.
5. Integrated Bootstrap Circuit: Supports high-side driving, simplifying circuit design.
6. Low Propagation Delay: Ensures rapid switching times for improved efficiency in high-frequency applications.
7. Fault Protection: Includes features for over-temperature protection, enhancing reliability.
The SI1922EDH-T1-GE3 is ideal for use in motor drivers, LED drivers, and power management circuits in various electronic systems.
Pinout
The SI1922EDH-T1-GE3 is a dual N-channel MOSFET with a total of 8 pins. Its primary function is to act as a power switch, commonly used in various applications such as voltage regulation and load switching. The pin configuration is as follows:
1. Gate1: Control input for the first N-channel MOSFET.
2. Drain1: The output connection for the first N-channel MOSFET.
3. Source1: The source connection for the first N-channel MOSFET.
4. Source2: The source connection for the second N-channel MOSFET.
5. Drain2: The output connection for the second N-channel MOSFET.
6. Gate2: Control input for the second N-channel MOSFET.
7. NC: Not connected (no internal connection).
8. NC: Not connected (no internal connection).
This device is designed for low on-resistance and high-speed switching capabilities, making it suitable for efficient power management solutions.
1. Gate1: Control input for the first N-channel MOSFET.
2. Drain1: The output connection for the first N-channel MOSFET.
3. Source1: The source connection for the first N-channel MOSFET.
4. Source2: The source connection for the second N-channel MOSFET.
5. Drain2: The output connection for the second N-channel MOSFET.
6. Gate2: Control input for the second N-channel MOSFET.
7. NC: Not connected (no internal connection).
8. NC: Not connected (no internal connection).
This device is designed for low on-resistance and high-speed switching capabilities, making it suitable for efficient power management solutions.
Manufacturer
The SI1922EDH-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company known for its production of electronic components, including resistors, capacitors, inductors, diodes, and transistors. They specialize in a wide range of applications across various industries such as automotive, consumer electronics, telecommunications, and industrial markets. Founded in 1962, Vishay has established itself as a leader in the electronic components sector, providing innovative solutions and high-quality products. The company is headquartered in Malvern, Pennsylvania, and operates internationally, offering a vast portfolio of passive and active components that cater to the needs of various electronic designs and applications.
Application
The SI1922EDH-T1-GE3 is a high-performance N-channel MOSFET typically used in applications such as power management, DC-DC converters, battery management systems, and motor control. Its low on-resistance and fast switching speeds make it suitable for efficient power delivery in consumer electronics, automotive systems, and renewable energy systems. Additionally, it can be utilized in load switching and power routing applications, enhancing overall energy efficiency and thermal performance in various electronic devices.
Package
The SI1922EDH-T1-GE3 is packaged in a 6-pin SOT23 format. This compact surface-mount package is designed for efficient thermal management and space-saving applications in electronic circuits.
