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SI6968BEDQ-T1-E3
+Lista de MateriaisMOSFET 2N-CH 20V 5.2A 8TSSOP
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FabricanteVishay Siliconix
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Peça do Fabricante #SI6968BEDQ-T1-E3
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Especificações
| Atributo | Valor |
| Series | TrenchFET® |
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 6.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| Power - Max | 1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package | 8-TSSOP |
| Base Product Number | SI6968 |
Visão Geral
Description
The SI6968BEDQ-T1-E3 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. With a voltage rating of 30V and a current handling capability of up to 32A, it is suitable for various applications including power supplies, motor drives, and DC-DC converters. This MOSFET features low on-resistance (R_DS(on)), which minimizes power losses during operation and enhances thermal performance.
The device is housed in a compact package, making it ideal for space-constrained environments. Its fast switching capabilities also contribute to improved efficiency in high-frequency applications. The SI6968BEDQ-T1-E3 is characterized by a high level of reliability and robustness, making it a preferred choice for both consumer and industrial electronics. Additionally, it includes built-in features such as a gate-source voltage rating that allows for easier integration into existing circuits. Overall, it is a versatile component that plays a crucial role in modern electronic designs.
The device is housed in a compact package, making it ideal for space-constrained environments. Its fast switching capabilities also contribute to improved efficiency in high-frequency applications. The SI6968BEDQ-T1-E3 is characterized by a high level of reliability and robustness, making it a preferred choice for both consumer and industrial electronics. Additionally, it includes built-in features such as a gate-source voltage rating that allows for easier integration into existing circuits. Overall, it is a versatile component that plays a crucial role in modern electronic designs.
Equivalent
The SI6968BEDQ-T1-E3 is a N-channel MOSFET. Equivalent products include the AO3400, IRLZ44N and BSS138, among others. When selecting equivalents, ensure similar specifications such as voltage, current ratings, R_DS(on), and package type to ensure compatibility. Always verify with datasheets for precise matching based on your application requirements.
Features
The SI6968BEDQ-T1-E3 is an N-channel MOSFET known for its high efficiency and performance in power management applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Handling: The device can handle continuous drain current (I_D) up to 60A, allowing it to manage significant loads.
3. RDS(on): It has a low on-resistance (R_DS(on)) typically around 6.5 mΩ at V_GS = 10V, which minimizes power loss during operation.
4. Gate Threshold Voltage: The threshold voltage (V_GS(th)) is typically in the range of 1V to 2.5V, enabling efficient switching with lower gate drive voltages.
5. Package: It is housed in a compact DPAK package, facilitating easier integration into various designs.
6. Applications: Commonly used in DC-DC converters, motor drives, and other power management circuits.
Overall, the SI6968BEDQ-T1-E3 is designed for high efficiency and thermal performance in demanding environments.
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Handling: The device can handle continuous drain current (I_D) up to 60A, allowing it to manage significant loads.
3. RDS(on): It has a low on-resistance (R_DS(on)) typically around 6.5 mΩ at V_GS = 10V, which minimizes power loss during operation.
4. Gate Threshold Voltage: The threshold voltage (V_GS(th)) is typically in the range of 1V to 2.5V, enabling efficient switching with lower gate drive voltages.
5. Package: It is housed in a compact DPAK package, facilitating easier integration into various designs.
6. Applications: Commonly used in DC-DC converters, motor drives, and other power management circuits.
Overall, the SI6968BEDQ-T1-E3 is designed for high efficiency and thermal performance in demanding environments.
Pinout
The SI6968BEDQ-T1-E3 is a N-channel MOSFET from Vishay with a total of 8 pins. The pin configuration is as follows:
1. Gate (G) – Controls the switching of the MOSFET.
2. Drain (D) – The main current-carrying terminal; connects to the load.
3. Source (S) – The terminal where current flows in; connects to ground or negative voltage.
The key functions of the SI6968BEDQ-T1-E3 include:
- Switching: Used in power management applications for efficient switching operations.
- Power Control: Suitable for high-speed switching applications in DC-DC converters, motor drives, and power supplies.
- Thermal Management: Designed for low R_DS(on) to minimize heat generation.
This MOSFET is characterized by low on-resistance, high-speed switching capabilities, and is typically utilized in various power electronic applications.
1. Gate (G) – Controls the switching of the MOSFET.
2. Drain (D) – The main current-carrying terminal; connects to the load.
3. Source (S) – The terminal where current flows in; connects to ground or negative voltage.
The key functions of the SI6968BEDQ-T1-E3 include:
- Switching: Used in power management applications for efficient switching operations.
- Power Control: Suitable for high-speed switching applications in DC-DC converters, motor drives, and power supplies.
- Thermal Management: Designed for low R_DS(on) to minimize heat generation.
This MOSFET is characterized by low on-resistance, high-speed switching capabilities, and is typically utilized in various power electronic applications.
Manufacturer
The SI6968BEDQ-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the production of discrete semiconductors and passive electronic components. Established in 1962, the company is headquartered in Malvern, Pennsylvania, and operates in various sectors, including automotive, industrial, consumer electronics, telecommunications, military, and aerospace. Vishay is known for its innovation and wide range of products, which include diodes, MOSFETs, capacitors, resistors, and inductors, among others. The SI6968BEDQ-T1-E3 specifically is a N-channel MOSFET designed for power management applications, providing high efficiency and low power loss in electronic circuits.
Application
The SI6968BEDQ-T1-E3 is a high-performance N-channel MOSFET primarily used in applications such as power management, DC-DC converters, and motor drivers. Its features make it suitable for synchronous rectification in power supplies, battery management systems, and energy-efficient designs. Additionally, it can be utilized in consumer electronics, industrial automation, and renewable energy systems due to its low on-resistance and high efficiency. Its compact package also allows for space-constrained applications.
Package
The SI6968BEDQ-T1-E3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) format, which features an 8-pin dual in-line configuration with surface mount capabilities.
