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SI3585CDV-T1-GE3
+Lista de MateriaisMOSFET N/P-CH 20V 3.9A 6TSOP
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FabricanteVishay Siliconix
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Peça do Fabricante #SI3585CDV-T1-GE3
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Ficha Técnica SI3585CDV-T1-GE3 DataSheet
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Especificações
| Atributo | Valor |
| Series | TrenchFET® |
| Part Status | Active |
| Base Product Number | SI3585 |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A, 2.1A |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 2.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 10V |
| Power - Max | 1.4W, 1.3W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | 6-TSOP |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Visão Geral
Description
The SI3585CDV-T1-GE3 is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay Siliconix. It is designed for high-efficiency power management applications. This component is particularly useful in electronic circuits that require switching and amplification, offering low on-resistance and fast switching speeds which help in reducing power loss and improving performance.
Key specifications include a drain-to-source voltage (V_DS) of 30V and a continuous drain current (I_D) of typically 6A. Its low on-resistance, typically around 14 mΩ, contributes to minimized power dissipation. The device comes in a PowerPAK 1212-8 package, which is compact and aids in efficient thermal management.
The SI3585CDV-T1-GE3 is commonly used in applications like DC-DC converters, load switches, and motor drives. Its small package and high efficiency make it suitable for portable and compact electronic devices where space and power efficiency are crucial.
Key specifications include a drain-to-source voltage (V_DS) of 30V and a continuous drain current (I_D) of typically 6A. Its low on-resistance, typically around 14 mΩ, contributes to minimized power dissipation. The device comes in a PowerPAK 1212-8 package, which is compact and aids in efficient thermal management.
The SI3585CDV-T1-GE3 is commonly used in applications like DC-DC converters, load switches, and motor drives. Its small package and high efficiency make it suitable for portable and compact electronic devices where space and power efficiency are crucial.
Equivalent
The SI3585CDV-T1-GE3 is a dual N-channel MOSFET. Equivalent products include:
1. Nexperia: BUK98150-55A
2. Infineon: BSC026N04NS
3. ON Semiconductor: NTMFS4935NT1G
4. Toshiba: SSM6J705T
Always verify the specifications such as voltage, current, Rds(on), and package type to ensure compatibility with your application.
1. Nexperia: BUK98150-55A
2. Infineon: BSC026N04NS
3. ON Semiconductor: NTMFS4935NT1G
4. Toshiba: SSM6J705T
Always verify the specifications such as voltage, current, Rds(on), and package type to ensure compatibility with your application.
Features
The SI3585CDV-T1-GE3 is a dual N-channel MOSFET designed for power management applications. Key features include:
1. Low On-Resistance: Offers low R_DS(on) for efficient performance, minimizing power loss and heat generation.
2. Compact Package: Available in a PowerPAK® 1212-8 package, which is compact and optimized for space-constrained applications.
3. High Current Capacity: Capable of handling significant current levels suitable for various power applications.
4. Fast Switching: Designed for rapid switching speeds, enhancing performance in fast-paced electronic environments.
5. Thermal Performance: Superior thermal characteristics due to efficient heat dissipation, enhancing reliability and longevity.
6. RoHS Compliance: Environmentally friendly design in line with global environmental standards.
7. Wide Operating Range: Supports a broad range of voltages and currents, making it versatile for different applications.
These features make it suitable for applications in computing, telecommunications, and other areas requiring efficient power management solutions.
1. Low On-Resistance: Offers low R_DS(on) for efficient performance, minimizing power loss and heat generation.
2. Compact Package: Available in a PowerPAK® 1212-8 package, which is compact and optimized for space-constrained applications.
3. High Current Capacity: Capable of handling significant current levels suitable for various power applications.
4. Fast Switching: Designed for rapid switching speeds, enhancing performance in fast-paced electronic environments.
5. Thermal Performance: Superior thermal characteristics due to efficient heat dissipation, enhancing reliability and longevity.
6. RoHS Compliance: Environmentally friendly design in line with global environmental standards.
7. Wide Operating Range: Supports a broad range of voltages and currents, making it versatile for different applications.
These features make it suitable for applications in computing, telecommunications, and other areas requiring efficient power management solutions.
Pinout
The SI3585CDV-T1-GE3 is a dual N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) made by Vishay Siliconix. It is primarily used for load switching and power management applications. The device is housed in a PowerPAK® SO-8 package, which is a small, surface-mount package designed to handle higher power levels.
The SI3585CDV-T1-GE3 typically has an 8-pin configuration. The pin functions are as follows:
1. Source1: Source terminal for the first MOSFET.
2. Gate1: Gate terminal for the first MOSFET, controlling its on/off state.
3. Drain1: Drain terminal for the first MOSFET.
4. Drain1: Another drain terminal for the first MOSFET (internally connected, providing better current handling).
5. Drain2: Drain terminal for the second MOSFET.
6. Drain2: Another drain terminal for the second MOSFET (internally connected).
7. Gate2: Gate terminal for the second MOSFET.
8. Source2: Source terminal for the second MOSFET.
The dual N-channel configuration allows it to handle two separate loads or paths, providing flexibility in circuit design. The device is suitable for use in high-efficiency power management applications.
The SI3585CDV-T1-GE3 typically has an 8-pin configuration. The pin functions are as follows:
1. Source1: Source terminal for the first MOSFET.
2. Gate1: Gate terminal for the first MOSFET, controlling its on/off state.
3. Drain1: Drain terminal for the first MOSFET.
4. Drain1: Another drain terminal for the first MOSFET (internally connected, providing better current handling).
5. Drain2: Drain terminal for the second MOSFET.
6. Drain2: Another drain terminal for the second MOSFET (internally connected).
7. Gate2: Gate terminal for the second MOSFET.
8. Source2: Source terminal for the second MOSFET.
The dual N-channel configuration allows it to handle two separate loads or paths, providing flexibility in circuit design. The device is suitable for use in high-efficiency power management applications.
Manufacturer
The SI3585CDV-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the design, manufacture, and supply of electronic components. The company produces a wide range of products including semiconductors, resistors, inductors, capacitors, and diodes, among others. Vishay’s components are used in a variety of industries including automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical. Vishay Intertechnology is known for its innovation and reliability in providing essential components for modern electronic devices and systems.
Application
The SI3585CDV-T1-GE3 is a dual N-channel MOSFET commonly used in various electronic applications. Key areas include power management systems, voltage regulation, and load switching in consumer electronics, telecommunications, and industrial equipment. It is also used in DC-DC converters, motor drives, and battery management systems due to its efficient power handling and low on-resistance, which minimize power loss and enhance overall efficiency. Additionally, the component is suitable for applications requiring compact designs due to its small package size, making it ideal for portable and space-constrained devices.
Package
The SI3585CDV-T1-GE3 is a dual n-channel MOSFET device housed in a PowerPAK® 1212-8 package, which is a surface-mount package designed to provide thermal efficiency and space-saving for high-density applications.
