CSD87335Q3D vs CSD87352Q5D

Esta comparação detalhada entre CSD87335Q3D e CSD87352Q5D fornece informações valiosas sobre suas especificações e principais características. Abordamos fatores importantes em detalhes, incluindo conformidade com RoHS, status REACH, série, estilo de montagem, tipo de encapsulamento e outras características relevantes. Apresentar as diferenças lado a lado simplifica a seleção de componentes, facilitando a escolha da melhor opção para sua aplicação específica.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

CSD87335Q3D

Texas Instruments

Lifecycle: Active
Stock: 6547 PCS
Series: Transistores - FET, MOSFET - FET, MOSFET Arrays

+Lista de Materiais RFQ

Part B

CSD87352Q5D

Texas Instruments

Lifecycle: Active
Stock: 7750 PCS
Package: LDFN-8
Series: Transistores - FETs, MOSFETs - Arrays

+Lista de Materiais RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	CSD87335Q3D	CSD87352Q5D
Series	NexFET™	NexFET™
Part Status	Active	Active
Base Product Number	CSD87335Q3	-
Technology	MOSFET (Metal Oxide)	-
Configuration	2 N-Channel (Dual) Asymmetrical	-
Drain to Source Voltage (Vdss)	30V	30V
Vgs(th) (Max) @ Id	1.9V @ 250µA	-
Gate Charge (Qg) (Max) @ Vgs	7.4nC @ 4.5V	-
Input Capacitance (Ciss) (Max) @ Vds	1050pF @ 15V	-
Power - Max	6W	8.5W
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Packaging	Cut Tape (CT), Tape & Reel (TR)	-
FET Type	-	2 N-Channel (Dual)
FET Feature	-	Logic Level Gate
Current - Continuous Drain(Id) @ 25°C	-	25A
Vgs(th)(Max) @ Id	-	1.15V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	-	12.5nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds	-	1800pF @ 15V

Compare RFQ